Abstract:Low-pressure chemical vapor deposition of in situ phosphorus-doped silicon films using disilane (Si2H6) and phosphine (PH3) has been investigated in the growth temperature range of 415 to 560 degrees C and for doping levels between 10(19) and 10(21) cm(-3). Regarding the film deposition, no significant difference in apparent activation energy was observed between the undoped and heavily doped deposition process. The electrical and structural properties of the films grown at 480 degrees C have been studied as a function of doping level and post-heat-treatment including furnace and rapid thermal annealings. The observed changes in film resistivity after isochronal annealings for doping levels above 10(20) cm(-3) are interpreted in terms of dopant segregation and supersaturation of carriers. The impact on resulting film properties when replacing disilane with silane (SiH4) in the deposition process has been investigated. The films were grown under identical conditions except for the deposition temperature which was 80 degrees C higher for the silane than for the disilane case. There is no indication of different phosphorus incorporation when comparing electrical properties of crystallized silane-and disilane-based films. However, the disilane layers exhibit larger crystallite grains and lower specific resistivities than the silane layers. In addition, the disilane films demonstrate a strongly preferred <111> texture after crystallization which is absent for the silane films. The observations are attributed to the higher degree of disorder of the as-deposited disilane films compared to the silane films resulting from the difference in deposition temperature.

Carrier Transport In Polycrystalline Silicon Films Deposited By A Layer-By-Layer Technique

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

A Conduction Model for Polysilicon Thin Films over a Wide Doping Level Range

Carrier Transport of Doped Nanocrystalline Si Formed by Annealing of Amorphous Si Films at Various Temperatures

The Effect of Film Thickness on the Electrical Properties of LPCVD Polysilicon Films

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

Charge carrier transport mechanism through different oxides for (n) poly‐Si/SiOx fired passivating contacts

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Characterization of in Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition

Molecular Layer-defined Transition of Carrier Distribution and Correlation with Transport in Organic Crystalline Semiconductors.

Deep Level Transient Spectroscopic Investigation of Phosphorus-Doped Silicon by Self-Assembled Molecular Monolayers

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Low-temperature preparation of phosphorus doped μc -Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition

Electrical Properties of Boron and Phosphorus Doped Polycrystalline Silicon Germanium Films

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films