Abstract:Doping silicon wafers without using highly toxic or corrosive chemical substances is a critical issue for semiconductor device manufacturing. Peter Thissen and Roberto C. Longo investigate thin mineral layers of hydroxyapatite as a doping basis. Measurements show that the phosphorus is transported through the silicon oxide barrier, then diffuses inside the oxide‐free silicon and finally changes the electrical activity. Doping silicon wafers without using highly toxic or corrosive chemical substances has become a critical issue for semiconductor device manufacturing. In this work, ultra‐thin films of hydroxyapatite (Ca5(PO4)3OH) are prepared by tethering by aggregation and growth (T‐BAG), and further processed by spike annealing. Via in situ infrared (IR), the decomposition of hydroxyapatite and intermixing with the native silicon oxide is observed already at temperatures as low as 200 °C. Phosphate transport through the native silicon oxide is driven by a phase transformation into a more stable thermal oxide. At 700 °C, diffusion of phosphorus into the sub‐surface region of oxide‐free silicon is observed. In situ IR combined with electrical impedance spectroscopy (EIS), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and X‐ray photoelectron spectroscopy (XPS) measurements allows to conclude that the phosphorus is: i) transported through the silicon oxide barrier, ii)) diffused inside the oxide‐free silicon, and iii) finally modified the electrical activity of the silicon wafer. To further explain the experimental findings, density‐functional theory (DFT) is used to demonstrate the extent of the effect of phosphorus doping on the electronic nature of silicon surfaces, showing that even small amounts of doping can have a measurable effect on the electrical performance of semiconductor wafers.

Deep Level Transient Spectroscopic Investigation of Phosphorus-Doped Silicon by Self-Assembled Molecular Monolayers

Monolayer Doping: A Shallow Acceptor of Phosphorous Doped in MoSe <sub>2</sub> Monolayer (Adv. Electron. Mater. 1/2020)

Toward Defect-Free Doping by Self-Assembled Molecular Monolayers: The Evolution of Interstitial Carbon-Related Defects in Phosphorus-Doped Silicon.

Phosphorus ionization in silicon doped by self-assembled macromolecular monolayers

A Shallow Acceptor of Phosphorous Doped in MoSe<sub>2</sub> Monolayer

De-carbonization of Self-Assembled Molecular Monolayers Doping in Silicon

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Full Activation of Dopants by Carbon-free Self-Assembled Molecular Monolayer Doping

Comprehensive Understanding on Phosphorus Precipitation in Heavily Phosphorus-Doped Czochralski Silicon

Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Mineral Interface Doping: Hydroxyapatite Deposited on Silicon to Trigger the Electronic Properties

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Characterization of deep-level defects in highly-doped silicon with asymmetric structure by transient capacitance spectroscopy

Thermal Pyrolysis Investigation of Self-Assembled Molecular Monolayer for Defect-Free Doping in Silicon

Dopant Activation and Photoresponses of Boron-Doped Silicon by Self-Assembled Molecular Monolayers

Leakage Current and Defect Analysis of Schottky Diodes on Molecular Monolayer-doped Silicon

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Ultradense Phosphorous Delta Layers Grown into Silicon from Ph3 Molecular Precursors