Abstract:A nonselective epitaxial growth process for heterojunction bipolar transistors has been studied. The difference in growth rates for epitaxial and polycrystalline films could be used to monitor the thickness of the intrinsic and extrinsic base layers. The films were grown using chemical vapor deposition on Si 〈100〉 (epitaxy) and on silicon dioxide (polycrystalline) at reduced pressure (20–80 Torr) for undoped and in situ B or As doping. The depositions were carried out using silane diluted in hydrogen. Diborane and arsine were used as the source gas for dopants. For the undoped Si films, the deposition of polycrystalline films had a substantially higher rate than that of epitaxial ones. The growth rate of both epitaxial and polycrystalline depositions decreased with increasing total pressure. It was, however, linearly proportional to the silane partial pressure, pSiH4. The dependence of the growth rate on the hydrogen partial pressure was proportional to pH2−0.82 for epitaxial and to pH2−0.60 for polycrystalline depositions. The apparent activation energy was 2.1 and 1.6 eV for the epitaxial and polycrystalline depositions, respectively. A growth mechanism assuming the dissociative adsorption of silane on the Si surface, in combination with first-order hydrogen desorption kinetics, was employed to describe the experimental observations, including the differences in deposition rates, dependency on the hydrogen partial pressure as well as apparent activation energy. In situ B doping influenced neither the epitaxial nor polycrystalline depositions. In situ As doping, on the other hand, largely reduced the growth rate compared to the undoped films to such an extent that there was no appreciable difference in growth rate between the epitaxial and polycrystalline Si. The doping concentration in the epitaxial B and As films were of the order of 1018 cm−3, identical deposition conditions yielded a 5 and 20 times larger dopant incorporation in the B and As doped polycrystalline films, respectively.

Boron- and phosphorus-doped polycrystalline silicon thin films prepared by silver-induced layer exchange

Polysilicon in situ phosphorus doping control over large concentration range using low temperature, low pressure chemical vapour deposition growth process

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Doping silicon nanocrystals with boron and phosphorus

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Characterization of in Situ Phosphorus‐Doped Polycrystalline Silicon Films Grown by Disilane‐Based Low‐Pressure Chemical Vapor Deposition

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Electrical Properties of Boron and Phosphorus Doped Polycrystalline Silicon Germanium Films

Boron Doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Layer-by-layer Technique and Its Application in N-I-p Flexible Amorphous Silicon Thin Film Solar Cells

Chemical Vapor Deposition of Undoped and In-Situ Boron- and Arsenic-Doped Epitaxial and Polycrystalline Silicon Films Grown Using Silane at Reduced Pressure

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

A 3‐in‐1 doping process for interdigitated back contact solar cells exploiting the understanding of co‐diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion