Abstract:An 80-nm gate length metamorphic high electron mobility transistor (mHEMT) on a GaAs substrate with high indium composite compound-channels In0.7Ga0.3As/In0.6Ga0.4 As and an optimized grade buffer scheme is presented. High 2-DEG Hall mobility values of 10200 cm(2)/(V.s) and a sheet density of 3.5 x 10(12) cm(2) at 300 K have been achieved. The device's T-shaped gate was made by utilizing a simple three layers electron beam resist, instead of employing a passivation layer for the T-share gate, which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate and simplifying the device manufacturing process. The ohmic contact resistance R-c is 0.2 Omega.mm when using the same metal system with the gate (Pt/Ti/Pt/Au), which reduces the manufacturing cycle of the device. The mHEMT device demonstrates excellent DC and RF characteristics. The peak extrinsic transconductance of 1.1 S/mm and the maximum drain current density of 0.86 A/mm are obtained. The unity current gain cut-off frequency (f(T)) and the maximum oscillation frequency (f(max)) are 246 and 301 GHz, respectively.

Fabrication of 160-Nm T-gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by Metal Organic Chemical Vapour Deposition

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Fabrication of 100-Nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD

0.3-&Amp;#x00b5;m Gate-Length Metamorphic AlInAs/GaInAs HEMTs on Silicon Substrates by MOCVD

Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition

Fabrication of 150-Nm Al 0.48 in 0.52 As/Ga 0.47 in 0.53 As Mhemts on GaAs Substrates

Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Fabrication of 45 Nm High in Component Metamorphic In(0.7)Ga0.3as/In0.6ga(0.4)As Composite-Channel High Electron-Mobility Transistors on Gaas Substrates

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

Fabrication of 80-Nm T-gate High Indium In0.7Ga0.3As/In0.6Ga0.4As Composite Channels Mhemt on GaAs Substrate with Simple Technological Process

High performance 50nm T-gate In(0.52)A1(0.48)As/In0.53Ga0.47As metamorphic high electron mobility transistors

100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f T = 249 GHz and f max = 415 GHz

High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

1.0 Μm Gate-Length InP-based InGaAs High Electron Mobility Transistors by Mental Organic Chemical Vapor Deposition

Enhancement-mode Lg = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408 GHz

High-Performance InGaAs HEMTs on Si Substrates for RF Applications

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

Mm-Wave Performance of 50nm T-Gate AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistors with Ft of 200 GHz

High-quality metamorphic HEMT grown on GaAs substrates by MBE

Growth and Characterization of 0.8-Μm Gate Length AlGaN/GaN HEMTs on Sapphire Substrates