Abstract:AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0 mu m GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN( 002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density I-dss of 737mA/mm, peak transconductance G(m) of 185 mS/mm, drain leakage current density I-ds of 1.7 mu A/mm, gate leakage current density I-gs of 24.8 mu A/mm and off-state breakdown voltage V-BR of 67V are achieved with L-g/W-g/L-gs/L-gd = 1/10/1/1 mu m. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency f(T) of 8.3 GHz and power gain cutoff frequency f(max) of 19.9 GHz are achieved with L-g/W-g/L-gs/L-gd = 1/100/1/1 mu m. Furthermore, the best rf performance with f(T) of 14.5 GHz and f(max) of 37.3 GHz is achieved with a reduced gate length of 0.7 mu m.

Growth and Characterization of 0.8-Μm Gate Length AlGaN/GaN HEMTs on Sapphire Substrates

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

Spacer Side-wall Processed 0.15 Μm GaN HEMT for Ka-band Application

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

Characteristics of InGaN Channel HEMTs Grown by MOCVD

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

MOCVD-grown High-Mobility Al0.3Ga0.7N/AlN/GaN HEMT Structure on Sapphire Substrate

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Scaled InAlN/GaN HEMT on Sapphire With f T /f max of 190/301 GHz

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

Fabrication of 150-Nm Al 0.48 in 0.52 As/Ga 0.47 in 0.53 As Mhemts on GaAs Substrates

0.3-&Amp;#x00b5;m Gate-Length Metamorphic AlInAs/GaInAs HEMTs on Silicon Substrates by MOCVD

MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer

Direct Current and Microwave Characteristics of Sub-Micron Algan/Gan High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

Fabrication of 160-Nm T-gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by Metal Organic Chemical Vapour Deposition

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd