1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

X.L. Wang,T.S. Cheng,Z.Y. Ma,G.X. Hu,H.L. Xiao,J.X. Ran,C.M. Wang,W.J. Luo

DOI: https://doi.org/10.1016/j.sse.2006.12.010

IF: 1.916

2007-01-01

Solid-State Electronics

Abstract:AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50mm diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215cm2/Vs at room temperature with sheet electron concentration of 1.044×1013/cm2 was achieved. The 50mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0Ω/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27nm for a scan area of 5μm×5μm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39W at 8GHz, with a power added efficiency of 46.2% and power gain of 7.54dB. A maximum drain current density of 1300mA/mm, an extrinsic transconductance of 382mS/mm, a current gain cutoff frequency of 31GHz and a maximum frequency of oscillation 60GHz were also achieved in the same devices.