Abstract:Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with gate length less than 0.5 μm using nanocrystalline diamond capping layers have been studied systematically. The approach of diamond-before-gate has been adopted to resolve the growth of nanocrystalline diamond capping layers and compatibility with the Schottky gate of GaN HEMTs, and the processes of diamond multi-step etching technique and AlGaN barrier protection are presented to improve the technological challenge of gate metal. The GaN HEMTs with nanocrystalline diamond passivated structure have been successfully prepared; the heat dissipation capability and electrical characteristics have been evaluated. The results show the that thermal resistance of GaN HEMTs with nanocrystalline diamond passivated structure is lower than conventional SiN-GaN HEMTs by 21.4%, and the mechanism of heat transfer for NDC-GaN HEMTs is revealed by simulation method in theory. Meanwhile, the GaN HEMTs with nanocrystalline diamond passivated structure has excellent output, small signal gain and cut-off frequency characteristics, especially the current-voltage, which has a 27.9% improvement than conventional SiN-GaN HEMTs. The nanocrystalline diamond capping layers for GaN HEMTs has significant performance advantages over the conventional SiN passivated structure.

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

Growth and Characterization of 0.8-Μm Gate Length AlGaN/GaN HEMTs on Sapphire Substrates

MOCVD-grown High-Mobility Al0.3Ga0.7N/AlN/GaN HEMT Structure on Sapphire Substrate

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer As Channel on SiC

MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with Improved Mobility Grown by MOCVD

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

GaN Based HEMT Materials and Devices Fabricated on SiC Substrate

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

MBE-grown AlGaN/GaN HEMTs with 186 mS/mm Transcond uctance

Fabrication of 160-Nm T-gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by Metal Organic Chemical Vapour Deposition

Characteristics of InGaN Channel HEMTs Grown by MOCVD

AlN/GaN HEMTs with f max Exceeding 300 GHz by Using Ge-Doped n ++ GaN Ohmic Contacts

AlN/GaN HEMTs with Fmax Exceeding 300 GHz by Using Ge-Doped N++gan Ohmic Contacts

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

High Performance AlGaN/GaN Hemts on GaN Substrates