Abstract:In this work, we have successfully developed high indium content In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.7</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.3</inf> As channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. Through experimental investigations, we have employed high indium content as channel materials to optimize device performance, including DC and microwave characteristics. The fabricated mHEMT with a gate length of 0.9 μ m and a gate width of 50 μm exhibits excellent DC and logic characteristics such as V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> =-2.33V,gm= 376 mS/mm, the maximum I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> was measured to be 512 mA/mm at V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf> =0.2V and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> =2.5V. Furthermore, the device exhibits exceptional high-frequency capabilities, such as f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> /f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> =20.5/49.9 GHz at V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> =2.0V.

Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition

0.3-&Amp;#x00b5;m Gate-Length Metamorphic AlInAs/GaInAs HEMTs on Silicon Substrates by MOCVD

Fabrication of 100-Nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD

Fabrication of 160-Nm T-gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by Metal Organic Chemical Vapour Deposition

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Fabrication of 150-Nm Al 0.48 in 0.52 As/Ga 0.47 in 0.53 As Mhemts on GaAs Substrates

Fabrication of 80-Nm T-gate High Indium In0.7Ga0.3As/In0.6Ga0.4As Composite Channels Mhemt on GaAs Substrate with Simple Technological Process

Fabrication of 45 Nm High in Component Metamorphic In(0.7)Ga0.3as/In0.6ga(0.4)As Composite-Channel High Electron-Mobility Transistors on Gaas Substrates

Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

1.0 Μm Gate-Length InP-based InGaAs High Electron Mobility Transistors by Mental Organic Chemical Vapor Deposition

High-quality metamorphic HEMT grown on GaAs substrates by MBE

High performance 50nm T-gate In(0.52)A1(0.48)As/In0.53Ga0.47As metamorphic high electron mobility transistors

High Performance 50nm T-Gate In0.52A10.48As/In0.53Ga0.47As Metamorphic High Electron Mobility Transistors

High-Performance InGaAs HEMTs on Si Substrates for RF Applications

Enhancement-mode Lg = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408 GHz

Fabrication and Characterization of High Indium In<inf>0.7</inf>Ga<inf>0.3</inf>As Channel MHEMT on GaAs Substrate

100-nm T-gate InAlAs/InGaAs InP-based HEMTs with f T = 249 GHz and f max = 415 GHz

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz

Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /algan/gan MIS-HEMTs with Self-Terminating Dielectric Etching Process in a 150-Mm Si Foundry

Growth and Characterization of 0.8-Μm Gate Length AlGaN/GaN HEMTs on Sapphire Substrates

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates