Enhancement-mode Lg = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408 GHz

ming li,chak wah tang,h li,kei may lau

DOI: https://doi.org/10.1016/j.sse.2014.04.040

IF: 1.916

2014-01-01

Solid-State Electronics

Abstract:•mHEMT was grown utilizing a novel multi-stage composite buffer scheme.•Lg=50nm T-shaped gate enhancement-mode mHEMT device was fabricated successfully.•The fT and fmax of 50-nm T-shaped gate devices were 305 and 408GHz.•Highest reported for MOCVD-grown enhancement-mode mHEMTs on GaAs substrate.