Fabrication of 100-Nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD

Ming Li,Haiou Li,Chak Wah Tang,Kei May Lau

DOI: https://doi.org/10.1109/led.2012.2186111

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:High-performance metamorphic Al0.49In0.51As-/Ga-0.47-In-0.53 As high-electron-mobility transistors (mHEMTs) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD) using an effective multistage composite buffer scheme have been fabricated. Room-temperature Hall measurements show an average sheet carrier density of 4.5 x 10(12) cm(-2) with a mobility of over 7500 cm(2)/V . s. Maximum transconductance of mHEMTs with a 100-nm gate length was similar to 770 mS/mm, which is nearly the same as that of mHEMTs with the same dimension grown on GaAs substrates by MOCVD. The unity current gain cutoff frequency (f(T)) and the maximum oscillation frequency (f(max)) were 210 and 146 GHz, respectively. To our best knowledge, these results are the best reported for MOCVD-grown mHEMTs on Si.