Abstract:Although lithium-nitrogen dual acceptor (LimN) co-doping has been experimentally applied successfully for the realization of p-type conductibility in bulk ZnO, the observed p-type conductivity usually suffers instability issues. In this contribution, we have employed first-principles method within the framework of density functional theory to explore the driving mechanism of p-type conductivity in LimN-doped ZnO with an emphasis on the lithium concentration (i.e., m = 1–4). Through examining the formation energy of different doping configurations and corresponding band structures, we find that Li2N complex doping (i.e., with a Li interstitial bound to a Li-N dual-acceptor co-doping center) is responsible for the p-type conductivity. However, such a complex is energetically meta-stable. Excess Li-interstitial in bulk ZnO sample could easily cross the energy barrier (~0.39 eV) and bind to the Li2N doping center, and form a stable but neutral Li3N cluster, causing the disappearance of p-type conductivity. This therefore explains the experimental instability phenomenon observed in the (Li, N)-doped ZnO. This work can be interesting and useful for designing electronic and optoelectronic devices based on p-type ZnO.

Investigation On The Formation Mechanism Of P-Type Li-N Dual-Doped Zno

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

Control of P- and N-Type Conductivities in Li-Doped Zno Thin Films

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

Junction Properties of Nitrogen-Doped Zno Thin Films

Growth Ambient Dependent Electrical Properties of Lithium and Nitrogen Dual-Doped Zno Films Prepared by Radio-Frequency Magnetron Sputtering

Optical properties of p-type ZnO doped by lithium and nitrogen

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Identification of Acceptor States in Li-N Dual-Doped P-Type Zno Thin Films

Revert stable p-type ZnO with LimN complex co-doping from the first-principles study

Formation of P-Type Mgzno by Nitrogen Doping

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

First-Prinicples Study of Mn-N Co-Doped P-Type Zno

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Dual-acceptor P-Type Behaviour in ZnO Films Grown by Plasma-Assisted Metalorganic Chemical Vapour Deposition

Formation Mechanisms of Low-Resistivity Ni∕Pt Ohmic Contacts to Li-Doped P-Type ZnO

Suppression Of Compensation From Nitrogen And Carbon Related Defects For P-Type N-Doped Zno