Abstract:In order to quantitatively characterize the enhancement of hole mobility of strained silicon under different stress intensity conditions, changes of hole effective mass should be studied. In the paper, strained silicon under in-plane biaxially tensile strain based on (001) substrate and longitudinal uniaxially compressive strain along 〈110〉 are investigated thoroughly. By solving the Hamiltonian of valence band using K·P model, we can obtain the relationship of density of state effective mass (mDOS), conductivity effective mass (mC) and splitting energy in valence band energy with stress intensity for both biaxially tensile strain and uniaxially compressive strain. For the stress intensity less than 1GPa, the paper presents the models of enhancement factor of hole mobility under the biaxially tensile strain and uniaxially compressive strain. The results show that biaxially tensile strain of silicon cannot enhance hole mobility under low stress intensity, while uniaxially compressive stress of silicon can enhance hole mobility greatly.

Model of Hole Scattering of Strained Si (101)

Low-field hole mobility model of strained Si1-xGex pMOSFET

Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity

An Analytic Model for Electron Mobility in Strained Si/Si1-xGex Nmosfets

Model of Electron Mobility in Inversion Layer of Strained Si/Si1-X Ge-X N Type Metal-Oxide-Semiconductor Field-Effect Transistors

The Model of Valence-Band Dispersion for Strained Ge/Si1-Xgex

Anisotropy and Isotropy of Hole Effective Mass of Strained Ge

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

A Low-field Hole Mobility Model of Si1-xGex Pmosfet with Shielded Effect of Coulomb Scattering

Study of strain distribution in GeSi/Si strained heterostructure

A Physical Model of Hole Mobility for Germanium-on-insulator Pmosfets

Analytical Threshold Voltage Models for Strained Si/Strained Si<sub>1-x</sub>Ge<sub>x</sub>/Relaxd Si<sub>1-y</sub>Ge<sub>y</sub> PMOSFET

A Universal Electron Mobility Model of Strained Si MOSFETs Based on Variational Wave Functions

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si<sub>1-<i>x</i></sub>Ge<sub><i>x</i></sub>Core–Shell Nanowire

Ab Initio Study of Electronic Structure of Strained

The Influence of Strained SiGe Thin Layer and Correlative Structure Parameters on Sub-Threshold Characteristics of SiGe PMOSFETs

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Strain effect analysis on the electrical conductivity of Si/Si 1-xGex nanocomposite thin films