Abstract:The low hole mobility restricts the application of Si complementary metal-oxide-semiconductor in high frequency fields. In this paper, the SiGe p-metal-oxide-semiconductor field-effect-transistor (PMOSFET) is studied. By numeric modeling and analysis, the vertical potential distribution of the device is obtained through solving one-dimensional Poisson equations, and the threshold-voltage model is established. The effects of Ge-profile, thickness of Si buffer layer, thickness of Si cap layer and substrate doping on the threshold-voltage are discussed. In SiGe layer, the quantization effect of the potential well in valence band is taken into account. When the gate voltage is large enough, the holes in SiGe channel layer will transit to the Si/SiO2 interface due to band bending and energy level splitting, causing the degradation of device performance. Thus, the hole-sheet-density model in quantum channel of SiGe PMOSFET is established, and the concept of the maximum operating gate voltage is proposed, moreover the channel saturation induced by gate voltage is calculated and analyzed. The results show that the threshold voltage and the maximal operating gate voltage are related to Ge-profile, and a proper increase of Ge-profile can extend the range of the operating gate voltage effectively.

A Low-field Hole Mobility Model of Si1-xGex Pmosfet with Shielded Effect of Coulomb Scattering

Low-field hole mobility model of strained Si1-xGex pMOSFET

A Physical Model of Hole Mobility for Germanium-on-insulator Pmosfets

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Model of Electron Mobility in Inversion Layer of Strained Si/Si1-X Ge-X N Type Metal-Oxide-Semiconductor Field-Effect Transistors

An Analytic Model for Electron Mobility in Strained Si/Si1-xGex Nmosfets

Study of Electron Mobility in 4H-Sic Buried-Channel MOSFETs

Mosfet Carrier Mobility Model Based on Gate Oxide Thickness, Threshold and Gate Voltages

Experimental Investigation on Alloy Scattering in Ssi/ ${\rm Si}_{0.5}{\rm Ge}_{0.5}$ /ssoi Quantum-Well P-Mosfet

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

Effect of SiO2/SiC Interface on Inversion Channel Electron Mobility of 4H-SiC n-MOSFET

Threshold-Voltage and Hole-Sheet-Density Model of Quantum Well Si/Sige/Si P Field Effect Transistor

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Carrier Effective Mobilities in Germanium MOSFET Inversion Layer Investigated by Monte Carlo Simulation

Hole Mobility in the Ultra-Thin-body Junctionless Germanium-on-insulator P-Channel Metal-Oxide-semiconductor Field-Effect Transistors

Anisotropic Hole Mobility in Strained Si<sub>1-x</sub>Ge<sub>x</sub>/(001)Si

A Physical Model On Scattering At High-K Dielectric/Sio2 Interface Of Sige P-Mosfets

Hole Scattering and Mobility in Compressively Strained Ge/(001)Si1-xGex

Assessment of hole mobility in strained InSb, GaSb and InGaSb based ultra-thin body pMOSFETs with different surface orientations

Model of Hole Scattering of Strained Si (101)