Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

The Influence of Strained SiGe Thin Layer and Correlative Structure Parameters on Sub-Threshold Characteristics of SiGe PMOSFETs

Simulation of Sub-Threshold Characteristics in Strained SiGe Channel PMOSFET

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Simulation of Deep Submicron Strained SiGe Channel PMOSFET Performance

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Analytical Threshold Voltage Models for Strained Si/Strained Si<sub>1-x</sub>Ge<sub>x</sub>/Relaxd Si<sub>1-y</sub>Ge<sub>y</sub> PMOSFET

Simulation Analysis of Electrical Characteristics of Strained Sige Channel-On-Insulator P-Mosfet

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

An analytical threshold voltage model of strained surrounding-gate MOSFETs

Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate

The improvement of MOSFET electric characteristics through strain engineering by refilled SiGe as Source and Drain

Physical Analysis and Modeling of the Nonlinear Miller Capacitance for SiC MOSFET.

Body Effect of SiGe and CESL Strained Nano-Node NMOSFETs on (100) Silicon Substrate

Modeling of the Influence on Effective $\textit{v}_{\text{th}}$ from Interface States, Short Channel Effects, and Contact Resistance in SiC MOSFETs

Investigation of Power MOSFET with Strained SiGe Channel

Design and Fabrication of Si/SiGe PMOSFETs

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor

Two-Dimensional Analytical Model of Hetero Strained Ge/Strained Si TFET

Analytical Drain Current Model of Strained Junctionless Nanowire Tunnel Field‐effect Transistor Fabricated on Virtual Substrate