Abstract:A detailed numerical study on Ge and Si ultrathin-body (UTB) p-type double-gate MOSFET (pDG-FET) is carried out with the help of in-house developed non-equilibrium Green's function (NEGF) simulator employing the six-band k·p model. Six typical confinement/transport crystal orientation configurations and three recent technology nodes are taken into account for better evaluation of device performance. The ballistic velocity and effective mass (m <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) are investigated and compared in detail between 3nm-thick Ge and Si films, with a better understanding of crystal orientation effect obtained. Device performance metrics, such as the ballistic ON-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) and subthreshold swing (SS), are also extracted and compared. With the source-to-drain tunneling (SDT) effect characterized, further numerical analysis indicates that Ge device suffers from more terrible SDT than Si device at all the considered channel lengths. As the physics behind is clarified, some expectations and suggestions for improving device performance, especially for Ge case, are addressed in the end.

Analytical Threshold Voltage Models for Strained Si/Strained Si<sub>1-x</sub>Ge<sub>x</sub>/Relaxd Si<sub>1-y</sub>Ge<sub>y</sub> PMOSFET

Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

An analytical threshold voltage model of strained surrounding-gate MOSFETs

Simulation of Sub-Threshold Characteristics in Strained SiGe Channel PMOSFET

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

The Influence of Strained SiGe Thin Layer and Correlative Structure Parameters on Sub-Threshold Characteristics of SiGe PMOSFETs

Simulation of Deep Submicron Strained SiGe Channel PMOSFET Performance

Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile

Investigation of Power MOSFET with Strained SiGe Channel

Threshold Voltage Modeling of Deep-Submicron Double-Gate Fully-Depleted SOI MOSFET

A Discrete Channel Model to Estimate Threshold Voltage Deviation Induced by the Voltage Stress in SiC Short Channel MOSFETs

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Fabrication of strained Si0.55Ge0.45 channel PMOSFETs directly on a Si substrate

Electric Potential and Threshold Voltage Models for Double-Gate Schottky-barrier Source/drain MOSFETs

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

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Study of temperature effects of mobility, swing, and early voltages on strained MOSFET devices

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Analytic model for subthreshold channel potential and threshold voltage of the Schottky-barrier surrounding-gate MOSFETS

Analytical Threshold Voltage Models for Strained Si/Strained Si&lt;sub&gt;1-x&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt;/Relaxd Si&lt;sub&gt;1-y&lt;/sub&gt;Ge&lt;sub&gt;y&lt;/sub&gt; PMOSFET