Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Simulation of Deep Submicron Strained SiGe Channel PMOSFET Performance

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Simulation of Sub-Threshold Characteristics in Strained SiGe Channel PMOSFET

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Optimized Design of Si-cap Layer in Strained-Sige Channel P-Mosfets Based on Computational and Experimental Approaches

The Influence of Strained SiGe Thin Layer and Correlative Structure Parameters on Sub-Threshold Characteristics of SiGe PMOSFETs

Fabrication of strained Si0.55Ge0.45 channel PMOSFETs directly on a Si substrate

Analytical Threshold Voltage Models for Strained Si/Strained Si<sub>1-x</sub>Ge<sub>x</sub>/Relaxd Si<sub>1-y</sub>Ge<sub>y</sub> PMOSFET

TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

Design and Fabrication of Si/SiGe PMOSFETs

Investigation of Power MOSFET with Strained SiGe Channel

Simulation Analysis of Electrical Characteristics of Strained Sige Channel-On-Insulator P-Mosfet

A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping

Comparison of NMOSFET and PMOSFET Devices That Combine CESL Stressor and SiGe Channel

Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress

Body Effect of SiGe and CESL Strained Nano-Node NMOSFETs on (100) Silicon Substrate

Optimization Design and Fabrication of Si/SiGe PMOSFETs

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Si- and Ge-Based Electronic Devices