Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

Optimization Design and Fabrication of Si/SiGe PMOSFETs

Design and Fabrication of Si/SiGe PMOSFETs

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Research Progress in Ge-based Advanced Field Effect Transistor Technology

Si- and Ge-Based Electronic Devices

Optimized Design of Si-cap Layer in Strained-Sige Channel P-Mosfets Based on Computational and Experimental Approaches

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

Physical design optimization of MOSFETs for millimeter wave and sub-millimeter wave circuits

Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET

Ge CMOS Technology with Advanced Interface and Junction Engineering.

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Investigation of Fabricated CMOS FishboneFETs and TreeFETs with Strained SiGe Nano-fins on Bulk-Si Substrate

III-V/Ge MOS Device Technologies for Low Power Integrated Systems

Impact of the Si Content on the Electrical Properties of NiSi x Ge 1– x Source/Drain Contact Metal for Ge pMOSFETs

New Materials for Post-Si Computing: Ge and GeSn Devices

Fabrication and selective wet etching of Si0.2Ge0.8/Ge multilayer for Si0.2Ge0.8 channel gate-all-around MOSFETs

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Design, fabrication and operation of sub-65nm straeved-si/si 1-xGEx mosfets

A Low Cost & High Performance PNP Transistor Design & Fabrication in SiGe BiCMOS