Abstract:In the past few decades, silicon (Si) complementary metaloxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction.As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges from both processing and theoretical perspectives.To maintain or further improve the transistor performance, Ge-based electronic transistors are explored as Ge exhibits higher hole and electron mobilities.As compared with the Si CMOS process, the process for fabricating high performance Ge-based transistors is still under development.This special issue aims to address some of the challenges encountered in the state-of-the-art technology, for both the Si-and Ge-based electronic transistors.For Ge MOSFETs, interface engineering and gate dielectric engineering are necessary to reduce the electrical active defects in the Ge surface and the high-/Ge interface.Other than Ge, SiGe is another possible channel material for the future CMOS technology.SiGe could be obtained by directly growing on Si substrate and therefore it has better compatibility with Si CMOS technologies.Besides the research works on Ge-based transistors, this special issue also includes some papers on the Si lateral diffused MOS (LDMOS).Novel structural designs were demonstrated to improve the performance and reliability of the Si LDMOS.Last but not least, this issue also reports a work on increasing the responsivity of the Si n-MOSFET photodetectors.We hope that readers of this special issue will find not only the accurate and most updated data in the papers, but also important solutions for the existing issues in the theory and fabrication of Si-and Ge-based electronic transistors.

The improvement of MOSFET electric characteristics through strain engineering by refilled SiGe as Source and Drain

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

Optimized Design of Si-cap Layer in Strained-Sige Channel P-Mosfets Based on Computational and Experimental Approaches

Electron Mobility Enhancement Characteristics and Its Temperature Dependence in Strained-Si n-MOSFETs

Mobility Enhancement Techniques for Ge and GeSn MOSFETs

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Electrical properties and temperature behavior of strained-Si N-MOSFETs

Design, fabrication and operation of sub-65nm straeved-si/si 1-xGEx mosfets

High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS

Investigation of Power MOSFET with Strained SiGe Channel

Design of DG MOSFET with Tri-Layered Strained Silicon Channel

Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

Strain Evolution in SiGe Nanosheet Transistor Process Flow

A New Strained-Silicon Channel Trench-gate Power MOSFET: Design and Analysis

Si- and Ge-Based Electronic Devices

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing

A Novel Strained Si Channel Heterojunction pMOSFET