Abstract:The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate architecture declines with an increase in short channel effects (SCEs). Consequently, to facilitate further increases in the drain current, the use of strained silicon technology provides a better solution. Thus, the development of a novel Gate-All-Around Field-Effect Transistor (GAAFET) incorporating a strained silicon channel with a 10 nm gate length is initiated and discussed. In this device, strain is incorporated in the channel, where a strained silicon germanium layer is wedged between two strained silicon layers. The GAAFET device has four gates that surround the channel to provide improved control of the gate over the strained channel region and also reduce the short channel effects in the devices. The electrical properties, such as the on current, off current, threshold voltage (VTH), subthreshold slope, drain-induced barrier lowering (DIBL), and Ion/Ioff current ratio, of the 10 nm channel length GAAFET are compared with the 22 nm strained silicon channel GAAFET, the existing SOI FinFET device on 10 nm gate length, and IRDS 2022 specifications device. The developed 10 nm channel length GAAFET, having an ultrathin strained silicon channel, delivers enriched device performance, being augmented in contrast to the IRDS 2022 specifications device, showing improved characteristics along with amended SCEs.

A New Strained-Silicon Channel Trench-gate Power MOSFET: Design and Analysis

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Optimized Design of Si-cap Layer in Strained-Sige Channel P-Mosfets Based on Computational and Experimental Approaches

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Investigation of Power MOSFET with Strained SiGe Channel

Design of DG MOSFET with Tri-Layered Strained Silicon Channel

Trench MOS-gated power devices

A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel

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High Mobility Strained-Ge Pmosfets with 0.7-Nm Ultrathin EOT Using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation

Narrow Gate Trench Power MOSFETs with Stepped Field Plate and Polysilicon Bridge

A Novel Strained Si Channel Heterojunction pMOSFET

Analysis of Off-State and On-State Performance in A Silicon-On-Insulator Power Mosfet with A Low-K Dielectric Trench

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs

High performance SiC trench-type MOSFET with an integrated MOS-channel diode

Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges

The improvement of MOSFET electric characteristics through strain engineering by refilled SiGe as Source and Drain

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field