Abstract:The carrier transport and tunneling capabilities of biaxially strained Ge1-xSnx alloys with (001), (110), and (111) orientations were comprehensively investigated and compared. The electron band structures of biaxially strained Ge1-xSnx alloys were calculated by the nonlocal empirical pseudopotential method and the modified virtual crystal approximation was adopted in the calculation. The electron and hole effective masses at the band edges were extracted using a parabolic line fit. It is shown that the applied biaxial strain and the high Sn composition are both helpful for the reduction of carrier effective masses, which leads to the enhanced carrier mobility and the boosted direct band-to-band-tunneling probability. Furthermore, the strain induced valance band splitting reduces the hole interband scattering, and the splitting also results in the significantly enhanced direct tunneling rate along the out-of-plane direction compared with that along the inplane direction. The biaxially strained (111) Ge1-xSnx alloys exhibit the smallest band gaps compared with (001) and (110) orientations, leading to the highest in-plane and out-of-plane direct tunneling probabilities. The small effective masses on (110) and (111) planes in some strained conditions also contribute to the enhanced carrier mobility and tunneling probability. Therefore, the biaxially strained (110) and (111) Ge1-xSnx alloys have the potential to outperform the corresponding (001) Ge1-xSnx devices. It is important to optimize the applied biaxial strain, the Sn composition, and the substrate orientation for the design of high performance Ge1-xSnx field-effect transistors. (c) 2015 AIP Publishing LLC.

Anisotropy and Isotropy of Hole Effective Mass of Strained Ge

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Effects Of Shell Strain On Valence Band Structure And Transport Properties Of Ge/Si1-Xgex Core-Shell Nanowire

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Achieving Enhanced Hole Transport Capability of Ge1−xSnxalloys Through Uniaxial Compressive Strain

Effects of Uniaxial Strain on Electron Effective Mass and Tunneling Capability of Direct Gap Ge1−xSnx Alloys

Experimental Study on Hole and Electron Effective Masses in Inversion Layers of Ge (100), (110) and (111) P- and N-Mosfets

Enhanced Carrier Mobility And Direct Tunneling Probability Of Biaxially Strained Ge1-Xsnx Alloys For Field-Effect Transistors Applications

Effective mass anomalies in strained Si thin films and crystals

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model

A Self-Consistent Numerical Approach for Characterizing the Band Structures and Gain Spectrum of Tensile-Strained and N(+)-Doped Ge/GeSi Quantum Wells

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Phonon-Spectra Of Strained Si And Ge

Modification of the Valence Band Structures of Polar and Nonpolar Plane Wurtzite-Gan by Anisotropic Strain

Efficient band-structure calculations of strained quantum wells

Valence band structure calculations of strained Ge$_{1-x}$Sn$_x$ quantum well pFETs

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Study of strain distribution in GeSi/Si strained heterostructure

Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

Investigation of Strain Effect on the Hole Mobility in GOI Tri-Gate Pfets Including Quantum Confinement