Abstract:Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mobility of electrons and holes in silicon upon deformation by uniaxial strain up to 2% in the [100] crystal direction. We compute the π 11 and π 12 electron piezoresistances based on the low-strain change of resistivity with temperature in the range 200 K to 400 K, in excellent agreement with experiment. We also predict them for holes which were only measured at room temperature. Remarkably, for electrons in the transverse direction, we predict a minimum room-temperature mobility about 1200 cm 2 V −1 s −1 at 0.3% uniaxial tensile strain while we observe a monotonous increase of the longitudinal transport, reaching a value of 2200 cm 2 V −1 s −1 at high strain. We confirm these findings experimentally using four-point bending measurements, establishing the reliability of our first-principles calculations. For holes, we find that the transport is almost unaffected by strain up to 0.3% uniaxial tensile strain and then rises significantly, more than doubling at 2% strain. Our findings open new perspectives to boost the mobility by applying a stress in the [100] direction. This is particularly interesting for holes for which shear strain was thought for a long time to be the only way to enhance the mobility.

Modeling of enhancement factor of hole mobility for strained silicon under low stress intensity

Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Analytical Electron-Mobility Model for Arbitrarily Stressed Silicon

Analysis of Stress Effect on (110)-Oriented Single-Gate SOI nMOSFETs Using a Silicon-Thickness-Dependent Deformation Potential

K·p and Monte Carlo Studies of Hole Mobility in Strained-Si Pmos Inversion Layers

Phonon-limited mobility for electrons and holes in highly-strained silicon

Optimization of effective electron mass in strained silicon nanosheets

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Mobility Enhancement of Strained GaSb P-Channel Metal Oxide Semiconductor Field-Effect Transistors with Biaxial Compressive Strain

Physical Modeling of Hole Mobility in Silicon Inversion Layers under Uniaxial Stress

Hole Mobility Enhancements In Strained Inxga1-Xsb Heterostructure P-Channel Mosfets

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Conversion of strain state from biaxial to uniaxial in strained silicon

Strain Induced Quantum Effect in Semiconductors

Impact of <100> channel direction for high mobility p-MOSFETs on biaxial strained silicon

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Study of strain distribution in GeSi/Si strained heterostructure

Investigation of Hole Mobility in Strained InSb Ultrathin Body Pmosfets

Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation

Strain-induced I-V characteristics modulation of p-n junctions and MOS capacitors in Si CMOS devices