Abstract:In this study, tin oxide (SnO2) solution mixtures containing indium (In) of 0%, 3%, 7%, 15%, and 30% were used to fabricate In- and N-codoped SnO2 films on glass at 400 degrees C using an ultrasonic spray pyrolysis method combined with thermal annealing at 600 degrees C and post nitrogen plasma treatment. X-ray diffraction analysis demonstrated that the incorporation of elemental In in the SnO2 film primarily induces the evolution of crystalline phases from In-doped SnO2 to Sn-doped In2O3, depending on the doping concentration. Upon exposure to N plasma, the dark current dramatically increases in proportion to the treatment duration (5-40 min); the dark current can be enhanced for the 3% and 7%-doped samples by as much as 3 orders of magnitude compared to the untreated samples. Hall measurements confirmed that hole carriers could dominate the SnO2 host matrix to promote p-type properties at a low In content (3% and 7%) with an increase in resistance compared to undoped samples. However, samples with higher In content (15% and 30%) showed the opposite trend, due to the formation of a secondary phase of n-type In2O3. X-ray photoelectron spectroscopy was used to probe the incorporation and dissociation of chemical bonds between the doped In and N atoms in the SnO2. Moreover, depth profile measurements showed a correlation between the elemental compositions and elemental distributions of the codoped SnO2 film. Current-voltage (I-V) characterization revealed the improved behavior of heterojunction diodes consisting of a p-type (In, N)-doped SnO2 thin film deposited on n-type ZnO nanorod arrays.

Atomic Nitrogen Doping And P-Type Conduction In Sno2

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

p-type conduction in nitrogen-doped SnO 2 films grown by thermal processing of tin nitride films

P-Type Doping of ZnO∶N Thin Fims by Alternating the Growth Atmosphere

Optical and Electrical Properties of Highly Nitrogen-Doped Zno Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

High Temperature Dehydrogenation for Realization of Nitrogen-Doped P-Type ZnO

New insight on the sources of p-type conductivity in SnO

P-Type Doping of Zno by Means of High-Density Inductively Coupled Plasmas

Control of N/N-2 Species Ratio in No Plasma for P-Type Doping of Zno

Influence of N-Doping on Microstructures and Properties of SnO2 Films

High Quality P-Type Zno Films Grown by Low Pressure Plasma-Assisted Mocvd with N2o Rf Plasma Doping Source

Effects of (P, N) Dual Acceptor Doping on Band Gap and P-Type Conduction Behavior of ZnO Films

Electrical And Structural Properties Of P-Type Zno : N Thin Films Prepared By Plasma Enhanced Chemical Vapour Deposition

Nitrogen Plasma-Assisted Codoped P-type (In, N):SnO(2) Ultra-Fine Thin Films and N-ZnO/p-In:SnO(2) Core-Shell Heterojunction Diodes Fabricated by an Ultrasonic Spray Pyrolysis Method

N Doped ZnO (n:Zno) Film Prepared by Reactive HiPIMS Deposition Technique

P-Type Conductivity In N-Doped Zno: The Role Of The N-Zn-V-O Complex

Effects of hydrogen doping on the phase structure and optoelectronic properties of p-type transparent SnO

X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped P-Type ZnO Thin Films

P-Type Conductivity and Stability of Ag–N Codoped ZnO Thin Films

Deposition And Electrical Properties Of N-In Codoped P-Type Zno Films By Ultrasonic Spray Pyrolysis