Nitrogen Doping-Mediated Room-Temperature Ferromagnetism in Insulating Co-doped SnO2 Films

Xinyu Liu,Javed Iqbal,Shuzhen Yang,Bo He,Rong Yu
DOI: https://doi.org/10.1016/j.apsusc.2010.01.079
IF: 6.7
2010-01-01
Applied Surface Science
Abstract:Co-doped SnO 2 films codoped with nitrogen (N) have been prepared by magnetron sputtering to investigate the effect of p -type defects on magnetic properties. The incorporation of N modifies the preferential growth orientation of the films. Multiple characterization techniques reveal that the incorporated Co 2+ and N 3− ions substitute for Sn 4+ and O 2− sites in SnO 2 lattice, respectively. As N concentration increases, the band gap of the films decreases because of the formation of Sn–N bond. Room-temperature ferromagnetism is observed in (Co, N)-codoped SnO 2 films, and the saturated magnetic moment is sensitive to the incorporated N concentration. The variations in the magnetic properties as a function of N concentration are discussed on the basis of bound magnetic polaron model.
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