First-principles Study of Nitrogen Doping and Oxygen Vacancy in Cubic PbTiO3

P. J. Niu,J. L. Yan,C. Y. Xu
DOI: https://doi.org/10.1016/j.commatsci.2014.10.057
IF: 3.572
2015-01-01
Computational Materials Science
Abstract:The structural and electrical properties of the intrinsic PbTiO3, N-doped PbTiO3 and N-VO co-doping PbTiO3 have been studied by using the first-principles calculations based on the hybrid Hartree-Fock density functionals. In addition, Hall effect measurement experiment is performed, both the experimental and theoretical results are compared. In N-doped PbTiO3 system, the N impurity states occur at the top of valance band, and Fermi energy level intersects with valance bands. The band gap becomes narrowed, the N-doped PbTiO3 shows a typical p-type semiconductor characteristic. When oxygen vacancy and N impurity coexist in PbTiO3, the conduction bands move downward and the acceptors are found to be fully compensated. (C) 2014 Elsevier B.V. All rights reserved.
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