Structural and electronic properties of -doped and -doped

Weidong Luo,Wenhui Duan,Steven G Louie,Marvin L Cohen
IF: 3.7
2004-01-01
Physical Review B
Abstract:We study the effects of n-doping and p-doping on the structural and electronic properties of Sr Ti O 3 using the ab initio pseudopotential density functional theory. Two types of electron doping and one type of hole doping are considered: introducing O vacancies, substituting V for Ti, and substituting Sc for Ti. We find that all dopings lead to small structural distortions. The effect of O vacancies on the structure is the largest. Electron doping leads to significant changes of the conduction band. For the O vacancy case, there is a Ti 3 d− e g type defect state near the lower conduction band; while in the case of substitutional V, some parts of the lowest conduction bands become very flat. Hole doping yields a larger density of states at the Fermi level than electron doping. Our results indicate that the rigid band model with a Fermi level shift upwards or downwards is not applicable to describe the effects of oxygen vacancy …
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