Abstract:Doping techniques are commonly utilized to effectively modify the physical properties of a desired compound. In this study, we employed the first-principles DFT calculations with a GGA + TB-mBJ approach as implemented by the Wien2k code, by investigating the effects of oxygen group element concentrations on the structural, electronic, and optical properties of the perovskite substance SrTiO 3 . We calculated the formation energies of each doped structure to assess the viability of synthesis. The band gap is equal to 1.355 eV, 0.653 eV, and 0.632 eV for 12.5 % S, Se, and Te doped SrTiO 3 , respectively. For the pure SrTiO 3 , the band gap is 2.584 eV. According to our findings, raising the chalcogen concentrations resulted in a considerable decrease in band gaps and an improvement in the ability to absorb light in the visible range (380–790 nm), exceeding 10 5 cm −1 for Te doped SrTiO 3 (STO). At zero frequency, the dielectric constant was found (ε1 (0)) to be 4.432 for SrTiO 3 pure and 6.332 for SrTiO 3 doped with Te (12.5 %) in GGA-PBE and (ε 1 (0)) = 4.432 and 12.217 for GGA + mBJ. The optical conductivity of SrTO 3 doped with Te is determined to be 0.322 * 10 4 /Ω. cm , in comparison to a value of 0.377 * 10 4 /Ω. cm for mBJ. Our research revealed that raising the chalcogen concentrations significantly enhanced the electrical conductivity, as predicted, along with improvements in optical conductivity and reflectivity. SrTiO 3-x Y x (Y = S, Se, or Te) represents one of our quaternary alloys, demonstrating substantial potential as a promising material for advanced photovoltaic and solar cell applications. Our findings revealed that the doped materials exhibited significantly high absorption rates and productivity. We also examined additional optical parameters, including optical band gap, Urbach energy, and optical conductivity.

Structural and Electronic Properties of N-Doped and P-Dopedsrtio3

Structural and electronic properties of -doped and -doped

First-principles Study of Nitrogen Doping and Oxygen Vacancy in Cubic PbTiO3

The Effect of Ⅲ-family Element Doping on Electronic Structures and Electrical Characteristics of SnO2

First-Principles Study of the Influences of Oxygen Defects Upon the Electronic Properties of Nb-Doped Tio2 by Gga + U Methods

Effects of doping on polar order in SrTiO$_{3}$ from first-principles modeling

A-Site Doping to Alter Oxygen Vacancy Diffusion in SrTiO 3

First-Principles Investigation of the Band Structure of S-Doped TiO2

Effect of charge doping on the electronic structure, orbital polarization, and structural distortion in nickelate superlattice

Tuning the magnetic and electronic properties of strontium titanate by carbon doping

Tuning Electronic Structure and Optical Properties of SrTiO 3 by Site-Specific Doping by Nb with N/B from Hybrid Functional Calculations

Competing Magnetic Fluctuations in Sr3Ru2O7 Probed by Ti Doping

Gd-Doping-Induced Insulator-Metal Transition in Srtio3

Theory for doping trends in titanium oxypnictide superconductors

Tuning of magnetism of SrTiO3 by site-specific doping

First-principles calculations to investigate impact of doping by chalcogen elements on the electronic, structural, and optical properties of SrTiO 3 compounds

Coupled electron-crystal lattice symmetry reduction in insulating materials with transition metal dopants: Cu-doped Pb$_{10}$(PO$_4$)$_6$O, and Vanadium doped SrTiO$_3$

Influence of Structural, Electronic and Optical Properties of Boron and Nitrogen Doping in Tetragonal PbTiO3: Insight from First-Principles

The electronic properties of SrTiO3-δ with oxygen vacancies or substitutions

Magnetism and metal-insulator transition in oxygen deficient SrTiO$_3$

First principles study on electronic structures and properties of Sn-doped rutile TiO2