Abstract:For n-type PbTe based compounds with relatively low optimal concentration (10(19) cm(-3)), the accompanied structural defects play pivotal role on the charge transport upon doping with alien valent atoms. Herein, we report that Oxygen has huge influence on the defect evolution and thermoelectric properties in n-type PbTe for the first time. A boosted thermoelectric figure of merit ZT of similar to 1.12 at 673 K and a ZT(ave) of 0.84 in the range of 300-873 K are achieved for vacuum sintered Bi-doped PbTe with the powders ground under the protection of Ar. This is in sharp contrast with the same Bi-doped PbTe material sintered with the powders ground in the air, which reaches a ZT(ave) of 0.52. This distinct thermoelectric properties in Bi-doped PbTe compounds are strongly correlated to Bi dopant, the vacancy defects (V-Pb '' and V-Te(center dot center dot)) induced during the fracturing process, and oxygen in the air. The coexistence of Bi dopant and oxygen lowers the formation energy of Pb vacancies and induces large number of O-Bi related Pb vacancies in the structure, yielding an acceptor-like effect. Such negatively charged Pb vacancies in the structure exert a strong long-range coulombic repulsion force on the electrons, leading to a low doping efficiency, a low carrier mobility (200 cm(2) V-1 s(-1)), and inferior electronic properties. Whereas, the protection provided by Ar effectively avoids the contamination by oxygen and prevents the formation of O-Bi related Pb vacancies, which appears remarkably effective in enhancing the electronic transport. A high carrier mobility of 1300 cm(2) V-1 s(-1) is attained in slightly doped Pb0.9995Bi0.0005Te sample and this contributes to an ultra-high power factor of 40 mu W cm(-1) K-2 for the Pb0.9995Bi0.0005Te sample at room temperature. The high PFave exceeds 25 mu W cm(-1) K-2 in the range of 300-723 K. The work provides a new insight into the formation mechanism of structural defects and a new avenue for suppressing the cation vacancies, resulting in higher performance of n-type PbTe-based compounds.

Effects of nitrogen doping and oxygen vacancies on thermoelectric properties of Pt/N-doped ITO thin film thermocouples: first-principles calculations and experiments

First-principles Study of Nitrogen Doping and Oxygen Vacancy in Cubic PbTiO3

High Temperature Thermoelectric Properties of Nitrogen Doped ITO Thin Films

Relationship Between the Thermoelectric Properties and Infrared Emissivity of Nb-Doped TiO2

Study on Aluminium Oxide Doping Modification of Indium Oxide and Thermoelectric Properties

Analysis of the Effect of Copper Doping on the Optoelectronic Properties of Indium Oxide Thin Films and the Thermoelectric Properties of an In2O3/Pt Thermocouple

First-principles calculations and high thermoelectric performance of La–Nb doped SrTiO3 ceramics

Unravelling Doping Effects on Pedot at the Molecular Level: from Geometry to Thermoelectric Transport Properties

Stability and thermoelectric properties of ITON:Pt thin film thermocouples

Effect of Nitrogen Doping Temperature on the Resistance Stability of ITO Thin Films

Annealing Effects in ITO Based Ceramic Thin Film Thermocouples

High thermoelectric performance of Nb-doped SrTiO3 bulk materials with different doping levels

Thermoelectrical Properties of ITO/Pt, In2O3/Pt and ITO/In2O3 Thermocouples Prepared with Magnetron Sputtering

Thermoelectric Properties and Electronic Structure of Al-Doped Zno

Microstructure and thermoelectric properties of In2O3/ITO thin film thermocouples with Al2O3 protecting layer

Doping Effects on Internally Coupled Seebeck Coefficient, Electrical, and Thermal Conductivities in Aluminum-Doped Tio2

Avoiding Oxygen Induced Pb Vacancies for High Thermoelectric Performance of N-Type Bi-doped Pb1-xBixTe Compounds

Fabrication of Pt/ITO Thin-Film Thermocouple on Metal Substrates

Transport Properties of Ni, Co, Fe, Mn Doped Cu0.01Bi2Te2.7Se0.3 for Thermoelectric Device Applications

Stability enhancement of the nitrogen-doped ITO thin films at high temperatures using two-step mixed atmosphere annealing technique

Effects of Substrate Temperature on the Properties of Nb-Doped ITO Thin Films