Abstract:Developing transparent p-type oxide semiconductor has been the long-standing subject of interest for optoelectronic devices, but hindered by the strongly localized valence band (VB) structure intrinsic to metal oxides. Sn2+ oxides represented by SnO are proposed as promising p-type semiconductors since the Sn 5s2 state could help to alleviate the carrier localization at the VB. In this work, using a combination of X-ray spectroscopies and density functional theory calculations, we explore the electronic structures of Sn2+ based Sn2Nb2O7 and Sn2Ta2O7 pyrochlores as wide bandgap p-type oxide semiconductors. Our results show that Sn2Nb2O7 and Sn2Ta2O7 have large optical bandgaps of 2.8 eV and 3.4 eV respectively, and better chemical stability over SnO. Both the experiment and theoretical calculations verified the presence of Sn 5s2 states at the top of VB of Sn2Nb2O7 and Sn2Ta2O7, and the Sn 5s2 states increase the VB dispersion and result in lower hole effective masses of 2.09 me and 2.23 me for Sn2Nb2O7 and Sn2Ta2O7 respectively but work less effectively than that for SnO. The different VB features originate from the varied Sn-O interactions influenced by crystal structures. The lattice distortions in SnO allow the hybridization between Sn 5p orbitals with occupied (Sn 5s-O 2p)* states, forming asymmetrically distributed electronic states with enhanced dispersions. However, in Sn2Nb2O7 and Sn2Ta2O7, these interactions are forbidden by their cubic symmetry and lead to the less dispersive electronic states. Increasing lattices distortions in Sn2Nb2O7 and Sn2Ta2O7 would be necessary to achieve higher hole mobilities. Our findings elucidate the microscopic origins of the opto-electronic properties in Tin (II) pyrochlore oxides, highlighting the significant role of synergistic valence band modulation and crystal structural design in advancing high performance p-type oxide semiconductors.

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