Abstract:Germanium carbide(Ge1-xCx)films have numerous attractive properties,which make them promising candidates for applications in the field of multilayer antireflection and protection coating of IR window.Although many investigations on the Ge1-xCx films prepared by different deposition techniques have been performed,it is still difficult to summarize from the literature and thus to understand the relationships between the growth process and the film properties.Effects of experimental parameters such as growth temperature on the composition and properties of Ge1-xCx films deposited by reactive magnetron sputtering are not well explored.In this work,the effects of growth temperature(Tg)on the composition,optical and mechanical properties for Ge1-xCx films,prepared via reactive magnetron sputtering,have been investigated.It is found that Ts remarkably influences the film composition,which results in a pronounced change in the refractive index,optical gap and hardness of the film.As Tg increases from 60 ℃ to 500 ℃,the content of carbon and hydrogen in the film decreases,which leads to a significant increase in the refractive index from 2.3 to 4.3 and an accompanying decrease in the optical gap from 1.4 eV to 1.0 eV.Furthermore,with increa-sing Tg the fraction of C—H and Ge—H bonds in Ge1-xCx film decreases,which significantly decreases optical absorption at ~5.3 μm and ~3.4 μm,and at the same time enhances the hardness of the film.These results suggest that growth temperature is one of key parameters for preparing Ge1-xCx films with excellent performance.

Mechanical and Environmental Properties of Ge1−xCx Thin Film

Preparation of Ge1-xCx Thin Film and Its Infrared Properties

The deposition and optical properties of Ge1−xCx thin film and infrared multilayer antireflection coatings

The surface topography, structural and mechanical properties of Ge 1 - XCx films prepared by magnetron co-sputtering

Optical and Electrical Properties of Nonstoichiometric A-Ge1−xcx Films Prepared by Magnetron Co-Sputtering

Role of carbon in the formation of hard Ge1−xCx thin films by reactive magnetron sputtering

Chemical Bonding of A-Ge1−xcx:H Films Grown by RF Reactive Sputtering

Chemical Bonding and Optical Properties of Germanium–carbon Alloy Films Prepared by Magnetron Co-Sputtering As a Function of Substrate Temperature

Non‐hydrogenated Amorphous Germanium Carbide with Adjustable Microstructure and Properties: a Potential Anti‐reflection and Protective Coating for Infrared Windows

Performance Improvement of Germanium Carbide Films by Increasing Growth Temperature

Physical and Electrical Properties of LPCVD-SiGe Thin Films

Microstructure and mechanical properties of heat-treated GeSb 2 Te 4 thin films

Structural Investigation And Barrier Properties Of A-C : H Thin Films On Polymer By Pecvd

Mechanical Properties Of Zirconia Thin Films Deposited By Filtered Cathodic Vacuum Arc

Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

Structural and Photoelectronic Properties of A-Sige:H Thin Films with Varied Ge Prepared by PECVD

Sige : H Thin Films Prepared By Plasma Assisted Reactive Thermal Chemical Vapor Deposition

The Effects of Substrate Temperature on the Composition and IR Transmission Properties of Germanium Carbon Films Deposited by Reactive RF Magnetron Sputtering

Increasing Sp(3) Hybridized Carbon Atoms In Germanium Carbide Films By Increasing The Argon Ion Energy And Germanium Content

Nanoindentation hardness of Ge50In4Ga13Se33 chalcogenide glass thin films

Microstructure and mechanical properties of heat-treated GeSb<sub>2</sub>Te<sub>4</sub> thin films