Nanoindentation hardness of Ge50In4Ga13Se33 chalcogenide glass thin films

H.S. Mohamed,E.M. Assim,E.G. El-Metwally

DOI: https://doi.org/10.1016/j.jnoncrysol.2022.121972

2023-01-01

Abstract:Chalcogenide glass semiconductors are widely used in microelectronic, solar cell and other electro-mechanical applications. The mechanical characteristics of Ge50In4Ga13Se33 chalcogenide thin films were investigated using the nanoindentation technique and correlated with their structure and thickness. The amorphous nature of Ge50In4Ga13Se33 films of different thicknesses was assured using X-ray diffraction. Atomic force microscopy (AFM) measurements were performed for the structure and surface morphology analysis of Ge50In4Ga13Se33 films with thicknesses of 376, 538 and 745 nm. The thickness dependence of hardness (H) and Young's modulus (E) of Ge50In4Ga13Se33 thin films was analyzed. The results showed that the surface roughness (Ra) and root mean square roughness(Rq) decreased with increasing film thickness. The mechanical characteristics of Ge50In4Ga13Se33 amorphous films as hardness and Young's modulus increased from 2.13 ± 0.13 to 3.23 ± 0.20 GPa and from 57.99 ± 1.53 to 91.42 ± 3.12 GPa, respectively. The obtained results (H) and (E) were well correlated with the AFM observations.

materials science, multidisciplinary, ceramics