Abstract:Germanium telluride (GeTe), a phase-change material, is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, <math> α</math> and <math> γ</math>) and one at high temperature (crystalline, <math> β</math>). Because transitions between the amorphous and crystalline states lead to significant changes in material properties (e.g., refractive index and resistivity), GeTe has been investigated as a phase-change material for photonics, thermoelectrics, ferroelectrics, and spintronics. Consequently, the temperature-dependent phase transitions in GeTe have been studied for bulk and thin-film GeTe, both fabricated by sputtering. Colloidal synthesis of nanoparticles offers a more flexible fabrication approach for amorphous and crystalline GeTe. These nanoparticles are known to exhibit size-dependent properties, such as an increased crystallization temperature for the amorphous-to-<math> α</math> transition in sub-10 nm GeTe particles. The <math> α</math>-to-<math> β</math> phase transition is also expected to vary with size, but this effect has not yet been investigated for GeTe. Here, we report time-resolved x-ray diffraction of GeTe nanoparticles with different diameters and from different synthetic protocols. We observe a non-volatile amorphous-to-<math> α</math> transition between 210 <math> °</math>C and 240 <math> °</math>C and a volatile <math> α</math>-to-<math> β</math> transition between 370 <math> °</math>C and 420 <math> °</math>C. The latter transition was reversible and repeatable. While the transition temperatures are shifted relative to the values known for bulk GeTe, the nanoparticle-based samples still exhibit the same structural phases reported for sputtered GeTe. Thus, colloidal GeTe maintains the same general phase behavior as bulk GeTe while allowing for more flexible and accessible fabrication. Therefore, nanoparticle-based GeTe films show great potential for applications such as in active photonics.

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Preparation And Short-Wavelength Optical Storage Properties Of Ge-Te Alloy Phase Change Thin Film

Optical Transition of Chalcogenide Phase-Change Thin Films

Structure and optical properties of GeTe film controlled by amorphous to crystalline phase transition

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Effects of Thickness and Si 3 N 4 Coverage on the Phase Transition Characteristics of GeTe Thin Films

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Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Phase Transitions in Germanium Telluride Nanoparticle Phase-Change Materials Studied by Time-Resolved X-Ray Diffraction

Effect of thickness and crystallization on the optical energy gap of some chalcogenide phase-change thin films

Study on the Optical Properties and Erasing Performance of Ge2Sb2Te5 Phase Change Thin Films

Preparation and Characterization of Gete4 Thin Films As A Candidate for Phase Change Memory Applications

Broadband and ultrafast terahertz modulation with GeTe thin films

Atomic Structure and Dynamics of Unusual and Wide‐Gap Phase‐Change Chalcogenides: A GeTe2 Case

Crystallization Kinetics and X-Ray Photoelectron Spectroscopy of Ga2TeSb7 Thin Film

Physical Vapor Deposition of Indium-Doped GeTe: Analyzing the Evaporation Process and Kinetics

Structural and optical properties of Ge60Te40: experimental and theoretical verification