Abstract:Germanium carbide(Ge1-xCx)films have numerous attractive properties,which make them promising candidates for applications in the field of multilayer antireflection and protection coating of IR window.Although many investigations on the Ge1-xCx films prepared by different deposition techniques have been performed,it is still difficult to summarize from the literature and thus to understand the relationships between the growth process and the film properties.Effects of experimental parameters such as growth temperature on the composition and properties of Ge1-xCx films deposited by reactive magnetron sputtering are not well explored.In this work,the effects of growth temperature(Tg)on the composition,optical and mechanical properties for Ge1-xCx films,prepared via reactive magnetron sputtering,have been investigated.It is found that Ts remarkably influences the film composition,which results in a pronounced change in the refractive index,optical gap and hardness of the film.As Tg increases from 60 ℃ to 500 ℃,the content of carbon and hydrogen in the film decreases,which leads to a significant increase in the refractive index from 2.3 to 4.3 and an accompanying decrease in the optical gap from 1.4 eV to 1.0 eV.Furthermore,with increa-sing Tg the fraction of C—H and Ge—H bonds in Ge1-xCx film decreases,which significantly decreases optical absorption at ~5.3 μm and ~3.4 μm,and at the same time enhances the hardness of the film.These results suggest that growth temperature is one of key parameters for preparing Ge1-xCx films with excellent performance.

Performance Improvement of Germanium Carbide Films by Increasing Growth Temperature

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

The surface topography, structural and mechanical properties of Ge 1 - XCx films prepared by magnetron co-sputtering

Role of carbon in the formation of hard Ge1−xCx thin films by reactive magnetron sputtering

Preparation of Ge1-xCx Thin Film and Its Infrared Properties

The deposition and optical properties of Ge1−xCx thin film and infrared multilayer antireflection coatings

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Chemical Bonding and Optical Properties of Germanium–carbon Alloy Films Prepared by Magnetron Co-Sputtering As a Function of Substrate Temperature

Optical and Electrical Properties of Nonstoichiometric A-Ge1−xcx Films Prepared by Magnetron Co-Sputtering

Non‐hydrogenated Amorphous Germanium Carbide with Adjustable Microstructure and Properties: a Potential Anti‐reflection and Protective Coating for Infrared Windows

Mechanical and Environmental Properties of Ge1−xCx Thin Film

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

Increasing Sp(3) Hybridized Carbon Atoms In Germanium Carbide Films By Increasing The Argon Ion Energy And Germanium Content

Influence of Substrate Temperature on the Growth of Μc-Sige Thin Film

The Effects of Substrate Temperature on the Composition and IR Transmission Properties of Germanium Carbon Films Deposited by Reactive RF Magnetron Sputtering

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Chemical Bonding of A-Ge1−xcx:H Films Grown by RF Reactive Sputtering

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Influence of Gas Pressure and RF Power on the Structural and Mechanical Properties of Germanium thin Films

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates