Chemical Bonding of A-Ge1−xcx:H Films Grown by RF Reactive Sputtering
CQ Hu,WT Zheng,B Zheng,JJ Li,ZS Jin,XM Bai,HW Tian,Q Jiang,XY Wang,JQ Zhu,SH Meng,XD He,JC Han
DOI: https://doi.org/10.1016/j.vacuum.2004.08.004
IF: 4
2004-01-01
Vacuum
Abstract:Amorphous hydrogenated germanium-carbon (a-Ge1−xCx:H) films were deposited by RF reactive sputtering pure Ge (111) target at different flow rate ratios of CH4/(CH4+Ar) in a discharge Ar/CH4, and their composition and chemical bonding were investigated using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR). XPS and FTIR results showed the content of germanium in the films decreased with the increase of the flow rate ratio CH4/(Ar+CH4), and the Ge–C, Ge–H, C–H bonds were formed in the films. The fraction of Ge–C, Ge–H, and C–H bonds was strongly dependent on the flow rate ratio. Raman results indicated that the films also contain both Ge–Ge and C–C bonding. Based on the change of the chemical bonding of a-Ge1−xCx:H films with the flow rate ratio CH4/(CH4+Ar), an optimal experimental condition for the application of infrared windows was obtained.