Abstract:Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal–oxide–semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm−2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.

Evaluation of chemical and structural properties of germanium-carbon coatings deposited by plasma enhanced chemical vapor deposition

SEM Research of SiO2 Thin Film on Inner Wall of Glass Container by PECVD

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Non‐hydrogenated Amorphous Germanium Carbide with Adjustable Microstructure and Properties: a Potential Anti‐reflection and Protective Coating for Infrared Windows

Chemical Bonding and Optical Properties of Germanium–carbon Alloy Films Prepared by Magnetron Co-Sputtering As a Function of Substrate Temperature

Mechanical and Environmental Properties of Ge1−xCx Thin Film

The deposition and optical properties of Ge1−xCx thin film and infrared multilayer antireflection coatings

Gas Barrier Properties of Amorphous Hydrogenated Carbon Films by Plasma -Enhanced CVD

Structural Investigation And Barrier Properties Of A-C : H Thin Films On Polymer By Pecvd

Structural and Photoelectronic Properties of A-Sige:H Thin Films with Varied Ge Prepared by PECVD

Increasing Sp(3) Hybridized Carbon Atoms In Germanium Carbide Films By Increasing The Argon Ion Energy And Germanium Content

Chemical Bonding of A-Ge1−xcx:H Films Grown by RF Reactive Sputtering

The Effects of Substrate Temperature on the Composition and IR Transmission Properties of Germanium Carbon Films Deposited by Reactive RF Magnetron Sputtering

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Preparation of Hydrogenated Amorphous Germanium Nitrogen Alloys by Plasma Enhanced Chemical Vapor Deposition

Structural Evolution During the Crystallization Process of Germanium Films Prepared by Plasma-Enhanced Chemical-Vapor-Deposition

Sige : H Thin Films Prepared By Plasma Assisted Reactive Thermal Chemical Vapor Deposition

Optical and microstructural studies of femtosecond laser treated amorphous germanium thin coatings

Study on the Preparation and Properties of Hydrogenated Amorphous Germanium Silicon Deposited in Argon Environment

Optical and Electrical Properties of Nonstoichiometric A-Ge1−xcx Films Prepared by Magnetron Co-Sputtering