Increasing Sp(3) Hybridized Carbon Atoms In Germanium Carbide Films By Increasing The Argon Ion Energy And Germanium Content

C. Q. Hu,B. Zheng,J. Q. Zhu,J. C. Han,W. T. Zheng,L. F. Guo

DOI: https://doi.org/10.1088/0022-3727/43/13/135103

2010-01-01

Abstract:We have prepared germanium carbide (Ge1-xCx) films on Si(0 0 1) by radio frequency (RF) reactive sputtering a pure Ge(1 1 1) target in a CH4/Ar mixture discharge, and found that the sp(3) hybridized carbon atoms in the Ge1-xCx film can be significantly increased in two ways. One is by increasing the Ge content via increasing the RF power during the film deposition, which can lead to a transition from sp(2) C-C to sp(3) C-Ge bonding in the film. Another is by increasing the Ar ion energy in a discharge Ar/CH4 gas by applying the negative bias voltage, which plays an important role in inducing the compressive stress in film. We find that when the compressive stress increases above a critical value of 2.2 GPa, an abrupt transition from sp(2) C-C to sp(3) C-C bonding occurs in the Ge1-xCx film, which is a consequence of energy minimization.