PECVD prepared Si2/Si3 N4 double layers electrets

Zhi-yu CHEN,Zhi-qiu LV,Jin-wen ZHANG,Ting LI,Da-yu TIAN,Ying WANG,Yu-feng JIN
DOI: https://doi.org/10.3969/j.issn.1007-4252.2008.01.028
2008-01-01
Abstract:This paper reports SiO 2/Si 3N 4 double layer electrets both prepared by PECVD on glass substrates with Cr/Au lower electrode. A process was developed to expose part of lower metal electrode, which is connected to the ground during corona charge process. Different charging temperatures, time and other factors were investigated for improving performance of PECVD prepared SiO 2/Si 3N 4 double layers electrets. This paper has proved high performance of PECVD prepared SiO 2/Si 3N 4 double layers electrets, which can thus be expected a wide application in micro devices.
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