Abstract:Thin, physically transferred layers of silicon dioxide (SiO2) thermally grown on the surfaces of silicon wafers offer excellent properties as long‐lived, hermetic biofluid barriers in flexible electronic implants. This paper explores materials and physics aspects of the transport of ions through the SiO2 and the resultant effects on device performance and reliability. Accelerated soak tests of devices under electrical bias stress relative to a surrounding phosphate buffered saline (PBS) solution at a pH of 7.4 reveal the field dependence of these processes. Similar experimental protocols establish that coatings of SiNx on the SiO2 can block the passage of ions. Systematic experimental and theoretical investigations reveal the details associated with transport though this bilayer structure, and they serve as the basis for lifetime projections corresponding to more than a decade of immersion in PBS solution at 37 °C for the case of 100/200 nm of SiO2/SiNx. Temperature‐dependent simulations offer further understanding of two competing failure mechanisms—dissolution and ion diffusion—on device lifetime. These findings establish a basic physical understanding of effects that are essential to the stable operation of flexible electronics as chronic implants.

PECVD SiO2/Si3N4 Double Layers Electrets on Glass Substrate

Study on PECVD SiO 2 /Si 3 N 4 double-layer electrets with different thicknesses

Improvement of the Performance of the Pecvd Sio2/Si3n4 Double-Layer Electrets

PECVD prepared Si2/Si3 N4 double layers electrets

PECVD SiO2/Si3N4 DOUBLE LAYERS ELECTRETS FOR APPLICATION IN MEMS POWER GENERATOR

Effects Of Different Si3n4 Thicknesses On The Performance Of Pecvd Sio2/Si3n4 Double Layers Electrets

PECVD SiO2/Si3N4 Double-layer Electrets for Application in Micro-devices

Preparation and charge stability of SiO2/Si3N4 double layer electret used in micro electro mechanical system

SEM Research of SiO2 Thin Film on Inner Wall of Glass Container by PECVD

Investigation on micromachining technology compatibility of PECVD SiO 2/Si3N4 double-layer electrets

Charge Distribution and Stability of SiO<sub>2</sub> Nanoarray Electret

Mechanical Characteristics of Sio2 Electrets

Silicon Based Polytetrafluoroethylene Electrets: Preparation and Corona Charging Characteristics

Annealing effect on electrical properties of high-k MgZnO film on silicon

In-situ diagnosis during preparation of SiO_x thin films by mass spectroscopy and their characteristics

Monomers effect on the gas and humid barrier properties in PECVD deposited SiOx film on PET surface

Electrochromic WO3 thin films attain unprecedented durability by potentiostatic pretreatment

Deposition voltages on the phase evolutions, microstructures, and oxidation behaviors of thermal-resistance Glass-MoSi2-SiC coating

Thin, Transferred Layers of Silicon Dioxide and Silicon Nitride As Water and Ion Barriers for Implantable Flexible Electronic Systems

Low-Voltage Oxide Homojunction Electric-Double-Layer Transistors Gated by Ion-Incorporated Inorganic Solid Electrolytes

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric