Abstract:Silicon dioxide has recently received considerable attention as an interlayer dielectric for use in multichip modules (MCMs) because of its excellent properties. A high deposition rate at relatively low temperatures is desirable for process compatibility and high throughput. PECVD silicon dioxide films up to 7 μm thick were deposited at 1000 Å/min in a showerhead type system using SiH4 , N2O , and N2 . Substrate temperature was varied from 250–350°C. The deposited films were annealed at various temperatures (up to 500°C). Uniformity, etch rate, film stress, refractive index, Si 2p and O 1s binding energies, and Si‐H and OH bonding configurations were studied. C‐V and I‐V characterizations of the films were performed to investigate their electrical quality. All the as‐deposited films exhibited moderate compressive stress. A considerable change in stress was observed after annealing the films in the above noted temperature range. OH content in the films was found to decrease and the hydrogen content in the films was found to increase with increasing deposition temperature. A good correlation between silanol (Si‐OH) and hydrogen content and silicon richness of the films with film stress was observed. The refractive index was found to decrease with increasing anneal temperature for all the films. Etching rates were lower for films deposited at higher temperatures. All films exhibited excellent breakdown characteristics.

Study on PECVD SiO 2 /Si 3 N 4 double-layer electrets with different thicknesses

PECVD SiO2/Si3N4 Double Layers Electrets on Glass Substrate

Effects Of Different Si3n4 Thicknesses On The Performance Of Pecvd Sio2/Si3n4 Double Layers Electrets

Improvement of the Performance of the Pecvd Sio2/Si3n4 Double-Layer Electrets

PECVD prepared Si2/Si3 N4 double layers electrets

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Effect of SiO2 Layer Thickness on SiO2/Si3N4 Multilayered Thin Films

Mechanical Characteristics of Sio2 Electrets

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Characterization of High Rate Deposited PECVD Silicon Dioxide Films for MCM Applications

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Influence of LiPON thickness on the electro-optical performance of inorganic all-solid-state electrochromic devices

Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing