Abstract:Epitaxial growth of Ge films on Si(100) substrates has been studied under ultra-high vacuum chemical vapor deposition (UHV-CVD) conditions by using digermane (Ge2H6) as the precursor. It was found out that high quality layers with thicknesses beyond 500 nm could be produced at complementary metal-oxide-semiconductor (CMOS) compatible conditions, demonstrating low defect density, sharp and narrow X-ray diffraction peaks, as well as room temperature photoluminescence around 1550 nm. The surface roughness values are comparable to prior reduced pressure chemical vapor deposition (RPCVD) results at similar growth temperatures. By employing higher growth temperatures, growth rates are significantly enhanced, resulting in much thicker layers beyond 2000 nm. Smoother sample surface could also be obtained, yielding a state-of-the-art surface root-mean-square (RMS) roughness value of 0.34 nm for the as-grown sample. At the same time, after being annealed at 750 °C for 20 minutes, the full width at half maximum (FWHM) of X-ray diffraction 004 rocking curve spectrum of the Ge layer is as low as 88 arcseconds, which stands the best among all Ge/Si samples. The current work has provided important reference for Ge/Si growth with Ge2H6 in low pressure regime and solidified material grounding for Ge-based optoelectronics and Si photonics.

Low Threading-Dislocation-Density Ge Film on Si Grown on A Pitting Ge Buffer Layer

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(1 1 1) film surface

Deposition of high-density Ge quantum dots on ultra-thin SiO2/Si(111) film surface

Sige Epitaxy with Graded Buffer by Ultrahigh Vacuum Chemical Vapor Deposition

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Cvd Growth of Ge Films on Graded Si1-Xgex: C Buffers

Study on Ge content of intermediate layer in growing relaxed Ge films on Si

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

Effects of phosphorous and antimony doping on thin Ge layers grown on Si

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Chemical vapor deposition of Ge films on Si1-xGex:C buffers