Abstract:After pretreatment of inductively coupled plasma (ICP) etching,the Ti/Al/Ni/Au ohmic contact with the specific contact resistivity of 3.7× 10-4 Ω · cm2 was developed on the N-face single crystal GaN substrate grown by hydride vapor phase epitaxy (HVPE).The surface topography and optical properties of the N-face GaN were characterized and compared by scanning electron microscope,atomic force microscope,cathode-luminescence and photoluminescence.The results indicate that the damage layers over N-face of the un-etched GaN sbustrate introduce impurities and defects and hinder the formation of ohmic contact.However,the ICP etching treatment can remove the surface damage layers effectively.X-ray photoelectron spectroscopy (XPS) analysis shows that Ga 3d core level of the etched sample shifts approximately 0.3 eV toward higher binding energy,as compared with the Ga 3d core level of the unetched sample,which indicates a reduction of the Schottky barrier height.The etching treatment is helpful for the formation of ohmic contact.Ti/Al/Ni/Au ohmic contact on N-face of Fe-doped semi-insulating GaN substrate with the etching process also shows good ohmic contact with the specific contact resistivity of 0.12 Ω·cm2.

Effect of Surface Treatment on P-Gan Ohmic Contact Property

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Influence and Mechanism of Surface Treatment on Ohmic Contacts to AlGaN Surface

Research on P-Type GaN / Au Ohmic Contact

Effects of Surface Chemical Treatment and Annealing on P-Gan/zno: Ga Contact

Effects of Surface Pretreatments on P-Gan/gzo Contact by Rf Magnetron Sputter

NiO Removal of Ni/Au Ohmic Contact to P-Gan after Annealing

Ohmic Contact of Ti/Al/Ni/Au on N-Face GaN

Ohmic Contact with a Contact Resistivity of 12 Ω ⋅ Mm on P-Gan/algan/gan

Effect of Surface Treatment of GaN Based Light Emitting Diode Wafers on the Leakage Current of Light Emitting Diode Devices

Oxidation Treatment on Ni/Au Ohmic Contacts to P‐type GaN

Investigation on Surface of p-GaN

Effects of Oxidation by O2 Plasma on Formation of Ni∕Au Ohmic Contact to P-Gan

Investigation of Ohmic Contact to Plasma-Etched N-Al0.5ga0.5n by Surface Treatment

Reversible Effect of the Thermal Processing of Ni/Au Ohmic Contact to P-Gan

Improved Ohmic Contacts to Plasma Etched High Al Fraction N-Algan by Active Surface Pretreatment

Ni/Ag/Pt Ohmic Contacts to P-type GaN

Ni/Pd-based Ohmic Contacts to P-Gan Through P-Ingan/p+-gan Contacting Layers

Effect of Surface Treatments on Schottky Contact on N-Alxga1−xn/gan Heterostructures

Improved Surface Characteristics and Contact Performance of Epitaxial P-Algan by a Chemical Treatment Process

Effects of Ag on Electrical Properties of Ag/Ni/P-Gan Ohmic Contact