Ni/Pd-based Ohmic Contacts to P-Gan Through P-Ingan/p+-gan Contacting Layers

Minglong Zhang,Masao Ikeda,Siyi Huang,Jianping Liu,Jianjun Zhu,Shuming Zhang,Hui Yang

DOI: https://doi.org/10.1088/1674-4926/43/9/092803

2022-01-01

Abstract:Specific contact resistance rho(c) to p-GaN was measured for various structures of Ni/Pd-based metals and thin (2030 nm thick) p-InGaN/p(+)GaN contacting layers. The effects of surface chemical treatment and annealing temperature were examined. The optimal annealing temperature was determined to be 550 degrees C, above which the sheet resistance of the samples degraded considerably, suggesting that undesirable alloying had occurred. Pd-containing metal showed similar to 35% lower rho(c) compared to that of single Ni. Very thin (2-3.5 nm thick) p-InGaN contacting layers grown on 20-25 nm thick p(+)-GaN layers exhibited one to two orders of magnitude smaller values of rho(c) compared to that of p(+)-GaN without p-InGaN. The current density dependence of rho(c), which is indicative of nonlinearity in current-voltage relation, was also examined. The lowest rho(c) achieved through this study was 4.9 x 10(-5) Omega.cm(2)@ J= 3.4 kA/cm(2).