Abstract:Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers. Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N 2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Influence of A Deep-Level-Defect Band Formed in A Heavily Mg-Doped Gan Contact Layer on the Ni/Au Contact to P-Gan

Effects of Thin Heavily Mg-Doped Gan Capping Layer on Ohmic Contact Formation of P-Type Gan

The Significant Effect of the Thickness of Ni Film on the Performance of the Ni/Au Ohmic Contact to P-Gan

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity

Ni/Pd-based Ohmic Contacts to P-Gan Through P-Ingan/p+-gan Contacting Layers

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Improvement of P-Type Ohmic Contact of GaN Laser Diodes by Using Delta-Doped P-Gan Contact Layer

The Dichotomous Role of Oxygen in the Ohmic Contact Formation on P-Type GaN Grown by MBE and MOCVD

Investigation of the Mechanism for Ohmic Contact Formation in Ti/Al/Ni/Au Contacts to Β-Ga2o3 Nanobelt Field-Effect Transistors.

Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices

Influence of Mg doping level at the initial growth stage on the gate reliability of p-GaN gate HEMTs

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Ti/Al/Ni/Au and Ti/Al/Pt/Au Multi-Layer Ohmic Contacts on AlxGa1-xN/GaN Heterostructures

Pd/In/Ni/Au Contact to N-Polar N-Type Gan Fabricated by Laser Lift-Off

Low-Resistive Ohmic Contacts in High-Electron-Mobility AIN/GaN Heterostructures by Suppressing the Oxygen Incorporation

Thickness and Mg doping of graded AlGaN layers: Influence on contact layer's structural and electrical properties for DUV emitters

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation