Abstract:The reason that p-GaN gate normally-off high electron mobility transistor (HEMT) device is able to draw prevail interests is not only for its outstanding electric properties of low on-resistance and high thermal conductivity, but also for its applications under high frequency and high voltage. In HEMT devices, the setting of Al component in the AlGaN barrier layer is a key parameter to affect the formation of two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction, and therefore directly determines the performance of the devices. This paper uses the Atlas module of the Silvaco-TCAD software to design and simulate p-GaN gate normally-off HEMT devices to investigate the effect of Al mole fraction content in the AlGaN barrier layer on the electrical performance, as well as the causes in terms of the conduction band energy structure diagram. The results show that the threshold voltage of the HEMT device decreases, the maximum saturation drain current increases, and the peak transductance of the HEMT device increases with increasing the Al content. In the off-state (zero gate voltage), the AlGaN/GaN potential well depth becomes deeper as the Al mole fraction increases, resulting in a lower driven force to rebuild the minimized 2DEG concentration in the GaN layer for switching from off-state to on-state, and this leads to a lower threshold voltage. While, in the on-state (5 V gate voltage), the deeper AlGaN/GaN potential well depth as the Al mole fraction increases, the higher of the 2DEG concentration of the GaN layer, leading to a higher maximum saturation output drain current. After optimization, the integrated electrical performance of the HEMT devices has been found best when the Al mole fraction content is about 0.25. The results obtained from the simulations are helpful for the experimental design of p-GaN gate normally-off HEMT devices

Influence of Mg doping level at the initial growth stage on the gate reliability of p-GaN gate HEMTs

Degradation Mechanisms of Mg-doped GaN/AlN Superlattices HEMTs under Electrical Stress

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped P-Gan Engineering

Gate Reliability and its Degradation Mechanism in the Normally OFF High-Electron-Mobility Transistors With Regrown p-GaN Gate

A Highly Efficient Method to Fabricate Normally-off AlGaN/GaN HEMTs with Low Gate Leakage Via Mg Diffusion

Reliability of enhancement-mode p-GaN gate GaN HEMT with multiple field plates

Gate Reliability of P-Gan Gate AlGaN/GaN High Electron Mobility Transistors

Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Effect of Hydrogen Poisoning on P-Gate AlGaN/GaN HEMTs

Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Normally-off GaN HEMTs with InGaN P-Gate Cap Layer Formed by Polarization Doping

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

Simulation study on electrical properties of p-GaN gate normally-off HEMT devices affected by Al mole fraction in AlGaN barrier layer

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

Stress Reliability Study of GaN HEMT Devices