Abstract:In order to realize the ZnO materials better in the application of the photoelectric devices,this paper studies the Ag/Au ohmic contact to n-ZnO thin films.Semiconductor characteristic analysis system is used to measure the I-Vcharacteristic curve.Dig disc method is used to test the ohmic contact resistance rate.They reflect the influence of annealing temperature on the contact characteristics.Auger electron spectroscopy(AES)is used to study the microscopic structure of ohmic contact finally.The results show that Ag(50nm)/Au(100nm)ohmic contact to n-ZnO thin film is the best when annealing temperature is 500℃.The as-deposited Ag/Au scheme shows a specific contact resistivity of 2.3×10-2Ω·cm-2.And the lowest specific contact resistivity is 5.2×10-4Ω·cm-2.The specific contact resistivity shows a decreasing tendency with the annealing temperature up to 500℃.However,for the sample annealed above 600℃,the I-Vcurves reveal the characteristics of local bending,which shows rectification trends.Interface diffusions and reactions induced by annealing treatment are found to be responsible for the decrease of ohmic contact resistivity and the rectification trends.The reflection of Ag/Au characteristic is better than that with other metal depositions.

NiO Removal of Ni/Au Ohmic Contact to P-Gan after Annealing

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry

Effects of Oxidation by O2 Plasma on Formation of Ni∕Au Ohmic Contact to P-Gan

Microstructure Evolution of Oxidized Ni/Au Ohmic Contacts to P-Gan Studied by X-Ray Diffraction

Reversible Effect of the Thermal Processing of Ni/Au Ohmic Contact to P-Gan

Rapid Thermal Annealing Induced Changes on the Contact of Ni/Au to N-doped ZnO

Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time

Thermal Annealing Effects on Ni/Au Contacts to P Type Gan in Different Ambient

Au/Ni/Au as a contact for p-Type GaAs

Highly Reflective Ni/Ag/Pt/Au Ohmic Contacts To P-Gan With Ito Interlayer

Oxidation Treatment on Ni/Au Ohmic Contacts to P‐type GaN

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Ti/Ni/Ti/Au Ohmic contact and Schottky transformation to Al-doped ZnO thin films

Temperature Dependent Diffusion and Epitaxial Behavior of Oxidized Au/Ni/P-Gan Ohmic Contact

Ni/Au Ohmic Contacts to p-Type N-Doped ZnO

Ohmic Contact Formation of Ti/Al/Ni/Au to N-Gan by Two-Step Annealing Method

Research on Ag/Au ohmic contact to n-ZnO

Research on P-Type GaN / Au Ohmic Contact

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Pd/In/Ni/Au Contact to N-Polar N-Type Gan Fabricated by Laser Lift-Off