Abstract:The surface band bending in Ga-polar n-type GaN surfaces, as well as the effect of Si doping levels and in situ Ar+ ion processing on band bending, was systematically investigated. To precisely determine the valence band maximum (VBM) of GaN beyond instrumental and material surface environments by XPS, a valence band feature fitting procedure based on photoemission spectra and theoretical densities of states has been developed. Poisson calculation with quadratic depletion approximation on surface potential has been used to model the band bending and further correct the VBM energy. Then, the actual surface band bending was correctly evaluated. Upward band bending of 1.55 ± 0.03 eV with highly Si doped n-GaN, which is about 0.88 eV higher than that of the moderately doped sample, was found. After in situ Ar+ plasma treatment, the varying degree of band bending was observed distinctly depending on the Si doping density. The surface components associated with the Ga/N ratio and Ga–O bonding concentration on the n-GaN surface have been used to evaluate the contribution to surface band bending.

Investigation on Surface of p-GaN

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Research on P-Type GaN / Au Ohmic Contact

Influence and Mechanism of Surface Treatment on Ohmic Contacts to AlGaN Surface

Investigation of Ohmic Contact to Plasma-Etched N-Al0.5ga0.5n by Surface Treatment

Ohmic Contacts in GaN-based Devices

Oxidation Treatment on Ni/Au Ohmic Contacts to P‐type GaN

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Ni/Ag/Pt Ohmic Contacts to P-type GaN

Study of Ti/Au, Ti/Al/Au, a nd Ti/Al/Ni/Au ohmic co ntacts to n-GaN

A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes

Surface Electronic Properties of N‐ and P‐type InGaN Alloys

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n -GaN

Improved Surface Characteristics and Contact Performance of Epitaxial P-Algan by a Chemical Treatment Process

Effects of Surface Chemical Treatment and Annealing on P-Gan/zno: Ga Contact

Accurate Surface Band Bending Determination on Ga-polar N-Type GaN Films by Fitting X-Ray Valence Band Photoemission Spectrum

Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Effect of Surface Treatments on Schottky Contact on N-Alxga1−xn/gan Heterostructures

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry

Passivation of Surface States in GaN by NiO Particles