Abstract:Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth of these heterostructures at a thickness of a few micrometers has been a challenging task due to the lattice mismatch and its associated instabilities resulting from the formation of growth defects. To elucidate these limits, we outline herein a process for the strain-balanced growth on silicon of 11.1/21.5 nm Ge/Si 0.18 Ge 0.82 superlattices (SLs) with a total thickness of 16 μ m corresponding to 500 periods. Composition, thickness, and interface width are preserved across the entire SL heterostructure, which is an indication of limited Si–Ge intermixing. High crystallinity and low defect density are obtained in the Ge/Si 0.18 Ge 0.82 layers; however, the dislocation pileup at the interface with the growth substrate induces micrometer-long cracks on the surface. This eventually leads to significant layer tilt in the strain-balanced SL and in the formation of millimeter-long, free-standing flakes. These results confirm the local uniformity of structural properties and highlight the critical importance of threading dislocations in shaping the wafer-level stability of thick multi-quantum well heterostructures required to implement effective silicon-compatible Ge/SiGe photonic devices.

Growth of Near Planar Si0.5 Ge0.5 Epitaxial Layers Directly on Si Substrate by UHV/CVD at 500℃

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Study of Si and Ge growth on Si(100) surface

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Doping And Growth Of Thin Si Epilayer And Sige By Uhv/Cvd

Growth of Fully Relaxed Si0. 83Ge0. 17 Layer Free of Dislocations by UHV/CVD System

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Nano-structured Multi-Layer SiGe Alloy Grown by Ultra High Vacuum Chemical Vapor Deposition

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Heteroepitaxial Growth of GexSi1-x Strained Layer on Si by RRH/VLP-CVD

Characterization and growth of germanium-silicon epitaxial layers by UHV/CVD

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Growth of Ultrathin Si1-xGex Films on Si Substrate for Fabricating SGOI