Abstract:Recently,ZnO has being paid more attention because of potential applications in ultraviolet light(emitting) diode and laser diode.However,it is very difficult to fabricate p-type ZnO due to serious self-compensation effect,which results in no great progress in p-n homojunction diodes.ZnO heterojunction as another route has been paid attention except the effort on the fabrication of p-ZnO.One attractive heterojunction is ZnO/GaN heterojunction because of similar crystal structure and small lattice mismatch of 1.8%.However,the emission of GaN plays a dominant role in the electroluminescence spectra of ZnO/GaN heterojunction light emitting diode.The main reason was analyzed,the new heterojunction was designed by introduced into MgO i-layer by plasma-enhanced molecular beam epitaxy(P-MBE),and n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was fabricated.The electrical properties of each layer were determined by Hall effect measurement.The ZnO shows n-type conductivity with the carrier concentration of 10~(18) cm~(3) and the resistivity of 0.6 Ω·cm.The hole concentration of p-GaN is about 10~(17) cm~(-3).I-V curve show rectification diode behavior in this heterojunction and have turn-on voltage of 4 V.The bright ultraviolet electroluminescence at 382 nm was observed in the room temperature electroluminescence spectrum.It is concluded that this emission is originated from the(recombination) in ZnO layer by comparing with photoluminescence spectra of ZnO and GaN.According to(Anderson) Model,it is proved that the injection of MgO layer can limit effectively electrons into p-GaN layer in this heterojunction due to very small electron affinity and wide energy band of MgO.It is very hopefull to (realize) the stimulated emission of ZnO using these heterojunctions by the improvement of(crystal) quality and the optimization of device structure.

Research of ZnO Homojeneous p-n Junction

Junction Properties of Nitrogen-Doped Zno Thin Films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

ZnO P-N Homojunctions and Ohmic Contacts to Al–N-co-doped P-Type ZnO

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Electrical Characterization of Zno-Based Homojunctions

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

N-Zno/i-mgo/p-gan Heterojunction Light-emitting Diodes

p-Type conduction in Al–N co-doped ZnO films

Preparation and Characterization of p-Type ZnO Using Li-N Dual-Acceptor Doping Method by Pulsed Laser Deposition

The research progress of p-type ZnO and ZnO p-n homojunctions

P-Type Conversion of Zno Thin Films by Plasma Immersion Ion Implantation

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Zno Light-Emitting Diode Grown By Plasma-Assisted Metal Organic Chemical Vapor Deposition (Vol 88, 173506 2006)

Rectifying and photovoltage properties of ZnO:Al/p-Si heterojunction

Low-resistivity, Stable P-Type ZnO Thin Films Realized Using a Li–N Dual-Acceptor Doping Method

Formation of p-type ZnMgO thin films by In–N codoping method

Dopant Source Choice for Formation of P-Type ZnO: Li Acceptor

N-ZnO Nanowires/p-Si Heterojunction with Amorphous Seed Layer Prepared by Atomic Layer Deposition