Parameters Characteristics of Ultra-thin-base SiGe HBT Within the Whole Temperature Range

李垚,魏同立,孔德义,许居衍

DOI: https://doi.org/10.3969/j.issn.1000-3819.2002.01.002

2002-01-01

Abstract:Variations of carrier temperature and diffusion coefficient with structural parameters in the ultra thin base in SiGe HBT are analyzed at different temperatures, then result of an experiment is given.

What problem does this paper attempt to address?

A Base Transport Model for Ultra-Thin-base SiGe HBT

Y Li,DY Kong,J Zhen,JY Xu

DOI: https://doi.org/10.1080/002072100750000097

2000-01-01

International Journal of Electronics

Abstract:The characteristics of parameters such as carrier temperature and diffusion coefficient in ultra-thin-base SiGe heterojunction bipolar transistors (HBTs) are analysed according to the solution of the Boltzmann equation; a new model of base transport in SiGe HBTs, different from traditional ones is described.
Impact of Ge Profile on Main Electrical Characteristics of SiGe

Wang Xuan,Xu Biye,He Lenian

DOI: https://doi.org/10.3969/j.issn.1003-353X.2008.08.011

2008-01-01

Abstract:SiGe heterojunction structure improves the performance of bipolar transistor.The mechanism of how Ge profiles impact the boost of current gain and frequency response was analyzed.Considering the impact of stability of Si1-xGex film,the technology and the structure of the device on Ge profile design for device electrical characteristics,the main characteristic parameters of β and fT for SiGe HBT was calculated.Introducing Ge and designing the Ge profile will affect these parameters positively.Ge improves the main characteristic parameters of the transistor was introduced;hence the SiGe HBT technology will be more essential in microwave and radio frequency electronic applications.
Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Mathew Adefusika Adekoya,Shuhuan Liu,Chao Wang,Xiaozhi Du,Tian Xing,Xuan Wang,Haodi Li,Yixian Guo,Junye Zhou,Ximin Zhang,Yutian Wang

DOI: https://doi.org/10.1088/1748-0221/19/08/p08026

2024-09-01

Journal of Instrumentation

Abstract:This study investigates the temperature dependence of single event transient (SET) effects in silicon germanium heterojunction bipolar transistors (SiGe HBTs). Using Silvaco TCAD simulations, we analyze the influence of linear energy transfer (LET), emitter bias voltage, and striking angle across a temperature range from 100 K to 300 K. The results reveal that temperature significantly affects emitter pulse current and charge collection induced by heavy ions. Higher temperatures increase charge collection, while lower temperatures correspond to higher emitter current and shorter pulse width. The study also observes an increase in bandgap energy (from 1.12 eV to 1.16 eV) and electrostatic potential (from 1.19 V to 1.25 V) with decreasing temperature. The study highlights the crucial role of temperature in SiGe HBT performance under radiation threats and emphasizes drift and diffusion mechanisms as dominant for charge collection.

instruments & instrumentation
Effects of Electron Temperature Distribution on Base Transit Time of SiGe HBT

LI Rui,YANG Shuang-jian,WANG Zong-man,PENG Bo,CHEN Hai-jun

DOI: https://doi.org/10.3969/j.issn.1674-8425-B.2009.12.039

2009-01-01

Abstract:The electron temperature distribution in the base of SiGe HBT and its effects on the base transit time are studied.Results show that the electron temperature distribution in the base is uneven,increasing from emitter to collector.Ge profile has a great effect on the electron temperature,and the effect of the base doping profile is rather small.Moreover,the base transit time decreases if the electron temperature distribution is considered,and the effect of electron temperature distribution on base transit time cannot be neglected if Ge profile has a large slope.
A Base Transit Time Model Considering Electron Temperature Effect in SiGe and SiGeC HBT

Li Yao

2010-01-01

JUSTC

Abstract:A closed-form physical model was given for SiGe and SiGeC HBT considering electron temperature effect.Incorporating electron temperature variation induced by high electric field(caused by Ge,C gradient) in the thin base,the base transit time shows different values compared with the drift-diffusion model.As Ge gradient increases,the difference can no longer be neglected.
Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Guofang Yu,Renrong Liang,Xiawa Wang,Jun Xu,Tian-Ling Ren

DOI: https://doi.org/10.1016/j.scib.2019.03.005

IF: 18.9

2019-01-01

Science Bulletin

Abstract:In this work, the device performances of discrete and integrated SiGe heterojunction bipolar transistors (HBTs) with different device structures from 300 to 4.8 K were investigated. The turn-on voltages of base-emitter and base-collector junctions increased non-linearly with temperature cooled to 4.8 K. Energy bandgap engineering was taken into account for the analytical model of the turn-on voltage versus temperature. Incomplete ionization occurred in the base-collector junction because of the low doping concentration. The trap-assisted tunneling current in the forward base current was clearly observed below 20 K. The ideality factor and saturation current were shown to be temperature dependence. The ideality factor was much larger than 2 below 40 K, indicating that the current is not only contributed by drift, diffusion and recombination, but also by tunneling. The peak current gain of the discrete SiGe HBTs achieved the maximum value of 3,388 at 80 K, while that of the integrated was 546 at 140 K. The transconductance in logarithm was linearly dependent on reciprocal temperature above 50 K, but flattened below 50 K. Early effect was evidently observed below 77 K in the fixed base current output characteristics of the discrete SiGe HBTs, and it was not obvious for the integrated SiGe HBTs.
Energy Transport Model for Base Transit Time of Ultrathin Base SiGe HBT's

CAI Rui-ren,LI Yao,LIU Rong-kan

DOI: https://doi.org/10.3969/j.issn.1004-3365.2006.05.021

IF: 1.992

2006-01-01

Microelectronics Journal

Abstract:By solving Boltzmann energy transport equation,the electron temperature distribution in the base region was obtained,and a model for base transit time of ultra-thin base SiGe HBT's was developed with electron temperature distribution taken into consideration.This model takes into account the effect of electron temperature on mobility,bandgap narrowing due to heavy doping in base region and the Ge concentration,and carrier velocity saturation in the BC junction. Comparisons were made on cut-off frequencies between predictions of this model and simulation results from the drift diffusion model to demonstrate the utility and accuracy of the model.
Numerical Simulation and Analysis of SiGe HBT's Characteristic Parameters

王祖军,刘书焕,唐本奇,陈伟,黄绍艳,肖志刚,张勇,刘敏波

DOI: https://doi.org/10.3969/j.issn.1005-9490.2009.03.013

2009-01-01

Abstract:DC and AC characteristics of SiGe HBT were simulated by the two-dimensional device numerical simulation software—MEDICI. The characteristic parameters were simulated in different base doping concentration, collector doping concentration, emitter doping concentration and different Ge content, respectively. The primary rules of collector current IC, base current IB, current gain β and cut-off frequency fT of SiGe HBT were concluded.
UHV/CVD n--type silicon epitaxy used for SiGe HBT device

Wentao Huang,Changchun Chen,Xiyou Li,Guanhao Shen,Wei Zhang,Zhihong Liu,Peiyi Chen,Peihsin Hsin Tsien

2004-01-01

Abstract:n--type silicon epitaxial layers were grown on arsenic-doped n--type silicon substrate by ultra-high vacuum chemical vapor deposition (UHV/CVD). The transition region thicknesses of the Si layers grown under different PH3 flux and different growth temperatures were investigated by spread-resistance probe. Results show that the growth temperature has remarkable influence on the arsenic diffusion from the Si substrate. The thickness of the transition region was 0.16 μm grown at 700°C and 0.06 μm at 500°C, respectively. Moreover, the dopant profiles were very abrupt. X-ray diffraction investigation of the Si layer grown at 700°C shows that the quality of Si layer is very high. Silicon-germanium hetero-junction bipolar transistor (SiGe HBT) was fabricated by a revised double-mesa polysilicon-emitter process. Tests show that the CB-junction breakdown characteristic of the SiGe HBT is very hard, and the leakage current is only 0.3 μA at VCB=14.0 V. The SiGe HBT device also had good output performance with current gain β=60 at VCE=5 V and IC= 3 mA.
Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

X. Pan 潘,Yahui 亚辉 Feng 冯,J. Fu 付,H. Guo 郭,Guofang 国芳 Yu 喻,Y. Liu 刘,J. Zhang 张

DOI: https://doi.org/10.1088/1674-1056/acaa28

2022-12-09

Chinese Physics B

Abstract:We experimentally demonstrate that the dominant mechanism of single-event transients in silicon-germanium heterojunction bipolar transistors (SiGe HBTs) can change with decreasing temperature from +20 °C to −180 °C. This is accomplished by using a new well-designed cryogenic experimental system suitable for a pulsed-laser platform. Firstly, when the temperature drops from +20 °C to −140 °C, the increased carrier mobility drives a slight increase in transient amplitude. However, as the temperature decreases further below −140 °C, the carrier freeze-out brings about an inflection point, which means the transient amplitude will decrease at cryogenic temperatures. To better understand this result, we analytically calculate the ionization rates of various dopants at different temperatures based on Altermatt’s new incomplete ionization model. The parasitic resistivities with temperature on the charge-collection pathway are extracted by a two-dimensional (2D) TCAD process simulation. In addition, we investigate the impact of temperature on the novel electron-injection process from emitter to base under different bias conditions. The increase of the emitter–base junction’s barrier height at low temperatures could suppress this electron-injection phenomenon. We have also optimized the built-in voltage equations of a high current compact model (HICUM) by introducing the impact of incomplete ionization. The present results and methods could provide a new reference for effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures, and could provide a new evidence of the potential of SiGe technology in applications in extreme cryogenic environments.

Physics,Engineering
Energy Transport Model of Scaling SiGe HBT

LI Yao,LIU Rong-kan,FU Xiang-ning,XU Wan-jing

DOI: https://doi.org/10.3969/j.issn.0253-2778.2005.05.003

2005-01-01

Abstract:The model of SiGe HBT(heterojunction bipolar transistor) based on simplified energy transport equation is given and the exact solution of this equation is obtained,from which exact distributions of electron temperature in different regions of the miniature SiGe HBT can be seen.Firstly,the four chapters are as follows: Aiming at electric field distribution in the base and C-B junction,different methods are applied to the three subregions:neutral base,the base part of B-C junction and the collector part of B-C junction.Expressions of electric field are then obtained when assuming boron doping in the base is gaussian and germanium doping is linear.In addition,Ge-induced bandgap narrowing is considered.Secondly,built-in potential,neutral base width W_(Beff) and collector depletion width W_(dc) have been derived,then Boltzmann transport equation is founded taking into account Ge content influence.According to the boundary condition,different electron temperature distributions in different regions can be described.Exact solutions of these equations are obtained.Thirdly,the electron temperature curves under different base widths are given and those under different Ge gradients are compared.During their transitions,electron temperatures surpass by far the lattice temperature 300K.Maximum point of electron temperature can be expressed.Finally,the(foundation) for analyzing velocity overshoot effect is laid in(future) bipolar transistor.
Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure

Jinshu Zhang,Xiaojun Jin,Pei-Hsin Tsien,Tai-Chin Lo

DOI: https://doi.org/10.1016/S0040-6090(98)00552-5

IF: 2.1

1998-01-01

Thin Solid Films

Abstract:Si/SiGe heterojunction bipolar transistor (HBT) layer structures, grown by ultra high vacuum chemical vapor deposition (UHVCVD), were investigated by high resolution X-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (XTEM). The SiGe base layer thickness in the Si/SiGe HBT structure is determined by HRXRD and confirmed by XTEM. HRXRD indicates that the high quality SiGe base layer and abrupt interfaces between Si and SiGe were obtained. The Ge content in the SiGe base layer, determined by HRXRD, is 16% for sample #a and #b and 10% for sample #c. XTEM shows no defects in both the strained SiGe base layer and the HBT structure. Mesa-type Si/SiGe HBT was fabricated and ideal base current over several orders was obtained. (C) 1998 Elsevier Science S.A. All rights reserved.
Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

Guofang Yu,Jie Cui,Yue Zhao,Jun Fu,Tian-Ling Ren

DOI: https://doi.org/10.1088/1742-6596/2065/1/012013

2021-01-01

Journal of Physics Conference Series

Abstract:A high breakdown voltage silicon-germanium heterojunction bipolar transistor operated over a wide temperature range from 300 K to 10 K has been investigated. The measured Gummel characteristics illustrate that the collector current and base current both shift to the higher voltage as the temperature decreases. The fT/fmax are extracted to be 23/40 GHz at 300K, 28/40 GHz at 90 K, and 25/37GHz at 10K, respectively. The effective amplification range becomes narrow as the temperature decreases. And the ideality factor of base current in the low current region is shown to be temperature-dependent and its value is much larger than 2 at cryogenic temperatures. This phenomenon indicates that the base current is not only contributed by drift, diffusion, and Shockley-Read-Hall recombination, but also by trap-assisted tunneling. The Hurkx local trap-assisted tunneling has been used to analyze the non-ideal base transport mechanism. And a calibrated TCAD device model is developed to further verify this non-ideal transport mechanism.
Low-Frequency Noise Characteristics of Si/SiGe HBT's

ZHANG Wan-rong,GAO Pan,JIN Dong-yue,ZHANG Jing,ZHANG Zheng-yuan,LIU Dao-guang,WANG Jian-an,XU Xue-liang,CHEN Guang-bing

DOI: https://doi.org/10.3969/j.issn.1004-3365.2006.01.007

2006-01-01

Abstract:Low-frequency noise characteristics of Si/Si_(1-x)Ge_x HBT's are simulated.Many factors,such as frequency,base current,collector current,geometry size(emitter area and length),Ge fraction and temperature,will have influence on low-frequency noise characteristics.Results from simulation show that Si/Si_(1-x)Ge_x HBT's have excellent low-frequency noise characteristics.
Models of Material Parameters for Strained Si/sub 1-X/ge/sub X/ Layers and Study of Hot-Carrier Transport and High Frequency Performance of Si/SiGe HBT

WG Wu,WR Zhang,Z Zeng,JS Luo

DOI: https://doi.org/10.1109/icsict.1995.500238

1995-01-01

Abstract:In this paper, the models of material parameters for strained Si/sub 1-x/Ge/sub x/ layers grown on <100> Si substrate and the hydrodynamics model (HDM) for Si/Si/sub 1-x/Ge/sub x/ heterojunction system are developed. Based on these models, the hot-carrier transport and high frequency performance of Si/SiGe HBT are simulated numerically. The factors that affect the cut-off frequency f/sub T/ and the optimum doping profile to improve it are discussed in detail and obtained.
Quantum Study of Ultra-Thin-base SiGe Heterojunction Bipolar Transistor

Li Yao,Juyan Xu,Deyi Kong,Wei Tongli

DOI: https://doi.org/10.1080/00207210110085904

2001-01-01

International Journal of Electronics

Abstract:A quantum study has been carried out by solving the Schrö;dinger equation for the ultra-thin-base in SiGe heterobipolar transistor. The results are compared with those of the Boltzmann model.
Development on Si/SiGe heterojunction bipolar transistors

Pei YANG,Kai LI,Lin HE,Dao LIU,Jing ZHANG,Jing LI,Meng XIE,Mo YANG

DOI: https://doi.org/10.3969/j.issn.1007-4252.2002.02.007

2002-01-01

Abstract:Through computer aided simulation and processing experiment, the structure parameters of Si/SiGe HBT were optimized carefully. An intrinsic space layer and a novel Ge fraction profile are used to reduce the influence of boron outdiffusion, base recombination and HBE. A SiGe HBT process compatible with conventional Si processes is developed, by which the SiGe HBT is fabricated successfully. The results of test indicated that the current gain β is 50 and the cut- off frequency f T is 5.1 GHz.
A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

Zhihong Liu,Changchun Chen,Wentao Huang,Weizhi Dou,Yilin Shan,Wei Zhang,Jun Zhu,Peihsin Hsin Tsien

IF: 3.451

2004-01-01

Metals and Materials International

Abstract:Si/SiGe heterojunction layers grown by ultra-high-vacuum chemical vapor deposition (UHV/CVD) were characterized by Rutherford backscattering/Channeling (RBS/C). A high quality SiGe base layer was obtained. Enhancement of strain relaxation of the SiGe layer with increasing thickness of the Si cap layer is demonstrated. In addition, strain stability of the SiGe layer with air appropriate Si cap layer during real SiGe HBT fabrication has also been investigated. Rapid thermal annealing (RTA) at elevated temperature between 880 degreesC and 910 degreesC for a very short period of time had almost no influence on the strain in a Si0.84Ge0.16 epilayer. However, high temperature (900 degreesC) furnace annealing for 1 hr prompted the strain in the Si0.84Ge0.16 layer to relax by approximately 15% relative to that in an as-grown structure.
High-Frequency Noise Characteristics of Si/SiGe HBT's

ZHANG Wan-rong,QIU Jian-jun,JIN Dong-yue,ZHANG Jing,ZHANG Zheng-yuan,LIU Dao-guang,WANG Jian-an,XU Xue-liang,CHEN Guang-bing

2006-01-01

Abstract:Based on Y parameters of device,high-frequency noise characteristics of Si/Si_(1-x)Ge_x HBT's is simulated.As the Ge fraction increases,the high-frequency minimum noise figure of Si/Si_(1-x)Ge_x HBT decreases.The results show that Si/SiGe HBTs have excellent high-frequency noise characteristics,compared with Si BJT.
Study on the Characteristics of the SiGe NPN HBT with Novel Structure

Donghua LIU,Wenting DUAN,Jing SHI,Jun HU,Fan CHEN,Jingfeng HUANG,Wensheng QIAN,Sheng'an XIAO,Dongyuan ZHU

DOI: https://doi.org/10.3969/j.issn.1000-3819.2013.01.007

2013-01-01

Abstract:The paper studies the characteristics of a SiGe NPN HBT with novel structure. Through analyzing the effect of width and length of emitter window, the device performance has been optimized by adjusting device structure and manufacturing process. Three devices with different working voltage and operation speed have achieved comparable industry performance and implemented successfully in optical communication and RF PA products.

Parameters Characteristics of Ultra-thin-base SiGe HBT Within the Whole Temperature Range

A Base Transport Model for Ultra-Thin-base SiGe HBT

Impact of Ge Profile on Main Electrical Characteristics of SiGe

Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Effects of Electron Temperature Distribution on Base Transit Time of SiGe HBT

A Base Transit Time Model Considering Electron Temperature Effect in SiGe and SiGeC HBT

Operation of Silicon-Germanium Heterojunction Bipolar Transistors with Different Structures at Deep Cryogenic Temperature.

Energy Transport Model for Base Transit Time of Ultrathin Base SiGe HBT's

Numerical Simulation and Analysis of SiGe HBT's Characteristic Parameters

UHV/CVD n--type silicon epitaxy used for SiGe HBT device

Temperature dependence of single-event transients in SiGe heterojunction bipolar transistors for cryogenic applications

Energy Transport Model of Scaling SiGe HBT

Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure

Investigation of Base Transport Mechanism in Silicon-Germanium Heterojunction Bipolar Transistor Operating over Wide Temperature Range

Low-Frequency Noise Characteristics of Si/SiGe HBT's

Models of Material Parameters for Strained Si/sub 1-X/ge/sub X/ Layers and Study of Hot-Carrier Transport and High Frequency Performance of Si/SiGe HBT

Quantum Study of Ultra-Thin-base SiGe Heterojunction Bipolar Transistor

Development on Si/SiGe heterojunction bipolar transistors

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

High-Frequency Noise Characteristics of Si/SiGe HBT's

Study on the Characteristics of the SiGe NPN HBT with Novel Structure