Abstract:High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors is studied, with a focus on the main feedback elements including the emitter series resistor, internal and external base-collector capacitors as well as the base series resistor, all of which are important in determining the behavior of the device equivalent circuit. In accordance with the respective features of definition of the Y- and Z-parameters, a novel combined use of them succeeds in reasonably simplifying the device equivalent circuit and thus decoupling the extraction of base-collector capacitances from other model parameters. As a result, a very simple direct extraction method is proposed. The proposed method is applied for determining the SiGe HBT small-signal model parameters by taking numerically simulated Y- and Z-parameters as nominal “measurement data" with the help of a Taurus-device simulator. The validity of the method is preliminarily confirmed by the observation of certain linear relations of device frequency behavior as predicted by the corresponding theoretical analysis. Furthermore, the extraction results can be used to reasonably account for the dependence of the extracted model parameters on device geometry and process parameters, reflecting the explicit physical meanings of parameters, and especially revealing the distributed nature of the base series resistor and its complex interactions with base-collector capacitors. Finally, the accuracy of our model parameter extraction method is further validated by comparing the modeled and simulated S-parameters as a function of frequency.

A Base Transport Model for Ultra-Thin-base SiGe HBT

Energy Transport Model for Base Transit Time of Ultrathin Base SiGe HBT's

A Base Transit Time Model Considering Electron Temperature Effect in SiGe and SiGeC HBT

Energy Transport Model of Scaling SiGe HBT

Parameters Characteristics of Ultra-thin-base SiGe HBT Within the Whole Temperature Range

Quantum Study of Ultra-Thin-base SiGe Heterojunction Bipolar Transistor

2D Simulation of a SiGe HBT Based on Energy Balance Model

Velocity Overshoot Model of SiGe and SiGeC HBT's

An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Effects of Electron Temperature Distribution on Base Transit Time of SiGe HBT

A Carrier-Based Analytic Model for Undoped (Lightly Doped) Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

The two-dimensional model for the base surface current in integrated bipolar transistors and its applications

Models of Material Parameters for Strained Si/sub 1-X/ge/sub X/ Layers and Study of Hot-Carrier Transport and High Frequency Performance of Si/SiGe HBT

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Velocity Overshoot Analysis in Sige and Sigechbt

Small-signal Model Parameter Extraction for Microwave SiGe HBTs Based on Y- and Z-parameter Characterization

A large-signal model for GaInP/GaAs heterojunction bipolar transistors

An enhanced model for InGaP/GaAs heterojunction bipolar transistor

A Numerical Method for Solving the Physics-Based Model of IGBT with All Free-Carrier Injection Conditions in the Base Region