A Base Transit Time Model Considering Electron Temperature Effect in SiGe and SiGeC HBT
Li Yao
2010-01-01
JUSTC
Abstract:A closed-form physical model was given for SiGe and SiGeC HBT considering electron temperature effect.Incorporating electron temperature variation induced by high electric field(caused by Ge,C gradient) in the thin base,the base transit time shows different values compared with the drift-diffusion model.As Ge gradient increases,the difference can no longer be neglected.
What problem does this paper attempt to address?